SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The MGV-125-22 is a Gallium Arsenide hyperabrupt varactor diode with a constant gamma of 1.25, designed for RF and microwave applications up to 40 GHz. It features passivated mesa construction for low leakage current and excellent post-tuning drift stability. The device supports a tuning voltage range from 0 to 22 V. Electrical specifications at +25°C include a nominal total capacitance of 1.00 pF (min 0.90 pF, max 1.10 pF) measured at 4 V reverse bias and 1 MHz. The typical tuning ratio is 5.0 (VR = 2 to 12 V) or 10 (VR = 2 to 20 V). Minimum Q factors are specified as 3,000 at 4 V and 50 MHz.
Verify the specific package style required, such as chip (C01A), E28, 28X, H20, P55, or 0805-2, as parasitic parameters vary by form factor. Confirm screening requirements against MIL-PRF-19500 or MIL-PRF-35834 if military-grade reliability is necessary for the application environment.
Select this component when a constant gamma of 1.25 is required for specific tuning linearity needs. Compare against the MGV075-x and MGV100-x families if different gamma values better suit the circuit design. Ensure the operating voltage range aligns with the 0 to 22 V specification and verify that the 1.00 pF nominal capacitance fits the target resonant frequency requirements.
This part belongs to the MGV125-x Series of GaAs hyperabrupt varactor diodes manufactured by MACOM Technology Solutions. The series offers three constant gamma options: 0.75, 1.0, and 1.25. The MGV-125-22 specifically provides a nominal capacitance of 1.00 pF within the 1.25 gamma family, suitable for high-frequency tuning applications.
MGV125-22-E28, MGV125-22-H20, MGV125-22-P55, MGV125-22-0805-2