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The MGW20N120 is an N-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by Motorola. It features a collector-emitter breakdown voltage of 1200 V and a continuous collector current rating of 28 A. The device supports a pulsed collector current of 56 A and has a turn-on delay time of 88 ns. Designed for robust operation, it functions within a junction temperature range of -55 °C to +150 °C. The component is housed in a TO-247AE package.
Verify the manufacturer origin carefully, as Motorola's semiconductor division was acquired by ON Semiconductor. Ensure the part number matches the specific datasheet revision. Confirm the package type is TO-247AE. Check for any ordering suffixes that might indicate specific binning or testing criteria. Authenticity verification is critical due to the age of the component.
Select this component when high blocking voltage and moderate continuous current are required. Consider the thermal resistance of the TO-247 package for heat dissipation needs. Evaluate the switching speed requirements against the 88 ns turn-on time. Ensure the application voltage does not exceed the 1200 V breakdown limit under all operating conditions.
This IGBT belongs to the family of discrete power semiconductors produced by Motorola before its semiconductor business transitioned. These components were widely used in mid-power industrial applications requiring reliable switching capabilities. The TO-247 package remains a standard form factor for through-hole mounting in power electronics.
ON Semiconductor may list preferred devices for future use. Verify electrical compatibility with potential substitutes from other manufacturers. Ensure pinout configurations match exactly. Check if alternative parts offer improved thermal performance or switching characteristics suitable for the specific circuit design.