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Product Detailed Parameters
- Description：TRANS IGBT CHIP N-CH 600V 50A 3P
- Series：*
- Mfr：onsemi
- Package：Bulk
- IGBT Type：-
- Voltage - Collector Emitter Breakdown (Max)：-
- Current - Collector (Ic) (Max)：-
- Current - Collector Pulsed (Icm)：-
- Vce(on) (Max) @ Vge, Ic：-
- Power - Max：-
- Switching Energy：-
- Input Type：-
- Gate Charge：-
- Td (on/off) @ 25°C：-
- Test Condition：-
- Reverse Recovery Time (trr)：-
- Operating Temperature：-
- Mounting Type：-
- Package / Case：-
- Supplier Device Package：-
- Grade：-
- Qualification：-
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Overview
The MGY30N60D is a single N-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by onsemi. It features a collector-emitter breakdown voltage of 600V and a continuous collector current rating of 30A at 25°C, with a maximum rated current of 75A. The device utilizes silicon technology and is housed in a TO-247-3 through-hole package. Key electrical parameters include a collector-emitter saturation voltage of 1.8V, a power dissipation capacity of 463W, and a gate-emitter voltage range of -20V to +20V. Operating temperatures span from -55°C to +150°C.
Feature Summary
- High-voltage capability with 600V collector-emitter breakdown for robust power switching
- Low saturation voltage of 1.8V to minimize conduction losses
- Integrated anti-parallel diode structure for efficient freewheeling
- Through-hole TO-247-3 packaging for high-power thermal management
Applications
- Switch Mode Power Supplies (SMPS)
- Motor control applications
- Industrial power conversion systems
Procurement Notes
Verify the specific datasheet version and compliance status before procurement, as the component may be subject to obsolescence notices or end-of-life transitions. Confirm that the TO-247-3 through-hole package aligns with the target PCB design requirements. Ensure that the 600V rating and 30A current limits are sufficient for the intended operational load conditions.
Selection Notes
Select this IGBT for applications requiring high voltage isolation and moderate current handling within a through-hole form factor. Consider the 1.8V saturation voltage for efficiency optimization in power circuits. Evaluate the thermal performance given the 463W dissipation rating against the available heatsinking infrastructure. Compare against alternative single IGBTs if higher current density or surface-mount options are required.
Part Context
The MGY30N60D belongs to onsemi's portfolio of discrete power semiconductors, specifically within the single IGBT category. It is part of a lineage of silicon-based power transistors designed for industrial and consumer electronics. The component represents a standard solution for medium-power switching tasks, offering a balance between voltage blocking capability and current carrying capacity in a widely used TO-247 package.
Replacement Considerations
Publicly confirmed substitute part numbers are not available in the provided documentation. Cross-referencing should be performed using key parameters: 600V Vceo, 30A Ic, TO-247-3 package, and N-channel IGBT topology.
