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The MGY40N60D is a single N-channel Field Stop IGBT manufactured by onsemi. It features a maximum collector-emitter voltage (Vceo) of 600 V and a continuous collector current (Ic) of 80 A at 25°C. The device has a maximum power dissipation (Pd) of 349 W and a collector-emitter saturation voltage (VceSAT) of 1.9 V. It operates within a temperature range of -55°C to +150°C, with a maximum gate-emitter voltage of ±20 V.
Verify the specific datasheet version and compliance documentation directly with onsemi or authorized distributors before procurement. Ensure that thermal management solutions align with the specified power dissipation limits. Confirm package compatibility and pinout definitions match the target circuit design requirements to prevent installation errors.
Select this component when a 600 V rating and high current capacity are required in a TO-247 package. Consider the 1.9 V saturation voltage for efficiency calculations in low-voltage drop applications. Evaluate thermal resistance parameters against the expected ambient temperature and heat sink capabilities to ensure reliable operation under load conditions.
This part belongs to onsemi's discrete IGBT lineup, specifically utilizing Field Stop technology. It is designed as a single-chip solution for medium-power applications. The component complements other devices in the series offering various voltage and current ratings for flexible system design.
Check for direct cross-references such as FGH40N60SMD or similar 600V 40A/80A Field Stop IGBTs from onsemi. Verify electrical parameters and pinout compatibility before substitution.