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The MI2050C-E3/4W is a dual common cathode Schottky rectifier manufactured by Vishay General Semiconductor. It features a TO-262AA (I2PAK) package with matte tin-plated leads. The device provides a maximum repetitive peak reverse voltage of 50 V and an average forward rectified current of 10 A per diode, totaling 20 A for the device. It exhibits a low forward voltage drop of 0.570 V at 10 A and 125 °C. Key electrical ratings include a peak forward surge current of 150 A and a maximum operating junction temperature of 150 °C.
Verify the specific ordering suffix against official documentation to confirm compliance status and packaging details. Ensure the component meets RoHS requirements if applicable to the design. Confirm thermal management strategies align with the specified junction temperature limits. Validate pinout orientation matches the TO-262AA mechanical data before integration.
Select this component for designs requiring robust Schottky rectification in a through-hole I2PAK package. Consider the 50 V reverse voltage rating and 10 A per diode current capacity when sizing for the application. Evaluate the thermal resistance characteristics to ensure adequate heat dissipation under continuous load conditions.
This part belongs to the MI20xxC series of dual common cathode Schottky rectifiers from Vishay. It utilizes Trench MOS Barrier Schottky technology to achieve low forward voltage and high efficiency. The series is designed for general purpose rectification in power electronics applications requiring reliable performance under high surge currents.
MI2060C-E3/4W
The maximum repetitive peak reverse voltage (VRRM) for the MI2050C is 50 V.
The MI2050C is configured as a dual common cathode Schottky rectifier, containing two independent diodes sharing a common cathode terminal.
The typical junction capacitance per diode is 300 pF, measured at 4.0 V reverse bias and 1 MHz frequency.