MI2050C-E3/4W

MI2050C-E3/4W

  • Description:DIODE ARR SCHOTT 50V 10A TO262AA
  • Series:-

SKU:40cc01d8259d Category: Brand:

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Product Detailed Parameters

  • Description:DIODE ARR SCHOTT 50V 10A TO262AA
  • Series:-
  • Mfr:Vishay General Semiconductor - Diodes Division
  • Package:Tube
  • Diode Configuration:1 Pair Common Cathode
  • Technology:Schottky
  • Voltage - DC Reverse (Vr) (Max):50 V
  • Current - Average Rectified (Io) (per Diode):10A
  • Voltage - Forward (Vf) (Max) @ If:740 mV @ 10 A
  • Speed:Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr):-
  • Current - Reverse Leakage @ Vr:150 µA @ 50 V
  • Operating Temperature - Junction:-65°C ~ 150°C
  • Mounting Type:Through Hole
  • Package / Case:TO-262-3 Long Leads, I2PAK, TO-262AA
  • Supplier Device Package:TO-262AA
  • Grade:-
  • Qualification:-

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MI2050C-E3/4W

Overview

The MI2050C-E3/4W is a dual common cathode Schottky rectifier manufactured by Vishay General Semiconductor. It features a TO-262AA (I2PAK) package with matte tin-plated leads. The device provides a maximum repetitive peak reverse voltage of 50 V and an average forward rectified current of 10 A per diode, totaling 20 A for the device. It exhibits a low forward voltage drop of 0.570 V at 10 A and 125 °C. Key electrical ratings include a peak forward surge current of 150 A and a maximum operating junction temperature of 150 °C.

Feature Summary

  • Guardring structure designed to provide overvoltage protection capabilities.
  • Low forward voltage drop characteristic that reduces power losses and increases efficiency.
  • High frequency operation suitable for switching mode applications.
  • High forward surge capability supporting transient load conditions.

Applications

  • Low voltage, high frequency rectification in switching mode power supplies.
  • Freewheeling diodes in inductive load circuits.
  • OR-ing diodes for redundant power supply configurations.
  • DC/DC converter output rectification stages.
  • Polarity protection circuits.

Procurement Notes

Verify the specific ordering suffix against official documentation to confirm compliance status and packaging details. Ensure the component meets RoHS requirements if applicable to the design. Confirm thermal management strategies align with the specified junction temperature limits. Validate pinout orientation matches the TO-262AA mechanical data before integration.

Selection Notes

Select this component for designs requiring robust Schottky rectification in a through-hole I2PAK package. Consider the 50 V reverse voltage rating and 10 A per diode current capacity when sizing for the application. Evaluate the thermal resistance characteristics to ensure adequate heat dissipation under continuous load conditions.

Part Context

This part belongs to the MI20xxC series of dual common cathode Schottky rectifiers from Vishay. It utilizes Trench MOS Barrier Schottky technology to achieve low forward voltage and high efficiency. The series is designed for general purpose rectification in power electronics applications requiring reliable performance under high surge currents.

Replacement Considerations

MI2060C-E3/4W

FAQ

What is the maximum repetitive peak reverse voltage for the MI2050C?

The maximum repetitive peak reverse voltage (VRRM) for the MI2050C is 50 V.

How is the MI2050C configured internally?

The MI2050C is configured as a dual common cathode Schottky rectifier, containing two independent diodes sharing a common cathode terminal.

What is the typical junction capacitance per diode?

The typical junction capacitance per diode is 300 pF, measured at 4.0 V reverse bias and 1 MHz frequency.

MI2050C-E3/4WMI2050C-E3/4W

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