MI2060C-E3/4W

MI2060C-E3/4W

  • Description:DIODE ARR SCHOTT 60V 10A TO262AA
  • Series:-

SKU:d49c5b46afaa Category: Brand:

ChipApex WhatsApp

Consult the customer manager about the wholesale price.

consultation hotline:86-132-6715-2157

email:[email protected]
Contact the product manager for consultation. One-stop consultation is available.


Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Submitting!
Submission successful!
Submission failed!
Email error!
Phone number error!

Product Detailed Parameters

  • Description:DIODE ARR SCHOTT 60V 10A TO262AA
  • Series:-
  • Mfr:Vishay General Semiconductor - Diodes Division
  • Package:Tube
  • Diode Configuration:1 Pair Common Cathode
  • Technology:Schottky
  • Voltage - DC Reverse (Vr) (Max):60 V
  • Current - Average Rectified (Io) (per Diode):10A
  • Voltage - Forward (Vf) (Max) @ If:740 mV @ 10 A
  • Speed:Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr):-
  • Current - Reverse Leakage @ Vr:150 µA @ 60 V
  • Operating Temperature - Junction:-65°C ~ 150°C
  • Mounting Type:Through Hole
  • Package / Case:TO-262-3 Long Leads, I2PAK, TO-262AA
  • Supplier Device Package:TO-262AA
  • Grade:-
  • Qualification:-

Download product information

MI2060C-E3/4W

Overview

The MI2060C-E3/4W is a dual common cathode Schottky rectifier manufactured by Vishay General Semiconductor - Diodes Division. It features a maximum repetitive peak reverse voltage of 60 V and a total average forward rectified current of 20 A (10 A per diode). The device utilizes a TO-262AA package with matte tin plated leads. Key electrical characteristics include a typical instantaneous forward voltage of 0.570 V at 10 A and 125 °C, and a peak forward surge current capability of 150 A. The operating junction temperature range extends from -65 °C to +150 °C.

Feature Summary

  • Guardring technology provides overvoltage protection for enhanced reliability.
  • Low forward voltage drop design minimizes power losses and improves efficiency.
  • High forward surge capability supports robust performance under transient conditions.
  • Suitable for high frequency operation in switching mode applications.

Applications

  • Low voltage, high frequency rectification in switching mode power supplies
  • Freewheeling diodes in inductive load circuits
  • OR-ing diodes for redundancy management
  • DC/DC converters
  • Polarity protection circuits

Procurement Notes

Verify the specific ordering suffix /4W corresponds to the tube delivery mode containing 50 units per tube as documented in the manufacturer's ordering information. Confirm that the E3 suffix indicates RoHS compliance and meets JESD 201 class 1A whisker test requirements before finalizing procurement specifications.

Selection Notes

Select this component when a dual common cathode configuration is required for low voltage applications. Ensure the circuit operates within the 60 V maximum repetitive peak reverse voltage limit. Verify thermal management capabilities align with the 2.0 °C/W typical thermal resistance per diode to maintain junction temperatures within the specified -65 °C to +150 °C range during continuous operation.

Part Context

This part belongs to the MI20xxC series of dual common cathode Schottky rectifiers. It shares mechanical and functional similarities with the MI2050C, differing primarily in the maximum repetitive peak reverse voltage rating. Both devices utilize the TO-262AA case and are designed for high efficiency power conversion tasks requiring low forward voltage drops.

Replacement Considerations

MI2050C-E3/4W serves as a direct substitute with identical packaging and current ratings but offers a lower 50 V reverse voltage rating compared to the 60 V rating of the MI2060C-E3/4W.

FAQ

What is the maximum repetitive peak reverse voltage for the MI2060C?

The maximum repetitive peak reverse voltage (VRRM) for the MI2060C is 60 V.

Does the MI2060C-E3/4W meet RoHS standards?

Yes, the base part number with the E3 suffix is RoHS-compliant and commercial grade.

What is the typical junction capacitance per diode?

The typical junction capacitance is 300 pF, measured at 4.0 V reverse voltage and 1 MHz frequency.

MI2060C-E3/4WMI2060C-E3/4W

Click on the inquiry