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The MIB30N65AT1Y-TP is a discrete Insulated Gate Bipolar Transistor (IGBT) manufactured by Micro Commercial Components. It utilizes Trench-Field Stop technology to deliver superior current conduction capability. The device is housed in a D2-PAK surface-mount package and supplied in a reel format with a factory pack quantity of 8000 units. This component belongs to the manufacturer's 650V IGBT product line, designed for high-power applications requiring efficient switching and low conduction losses.
Verify availability status directly with authorized distributors, as supply may be restricted or limited in certain regions. Confirm the specific datasheet revision and ordering suffixes match design requirements before finalizing procurement plans. Ensure compliance with regional shipping restrictions applicable to semiconductor components.
Select this component for designs requiring a 650V rated N-channel IGBT in a D2-PAK package. Consider the thermal performance characteristics inherent to the Trench-Field Stop architecture when designing heat dissipation solutions. Verify that the continuous collector current and saturation voltage parameters align with the specific load requirements of the target application circuit.
This part is part of Micro Commercial Components' portfolio of 650V and 1200V IGBTs. The MIB series leverages advanced trench technology to improve efficiency compared to standard planar devices. It serves as a discrete solution for power electronics where modular IGBTs are not required, offering a balance between performance and cost for medium-power applications.
Cross-reference with other 650V D2-PAK IGBTs from different manufacturers if supply constraints exist. Ensure pinout compatibility and verify that electrical parameters such as Vcesat and switching times meet or exceed the original design specifications without modifying the PCB layout.