MID100-12A3

Overview

The MID100-12A3 is a single N-channel IGBT module from IXYS, utilizing NPT technology. It features a 1200V collector-emitter voltage and a continuous collector current of 90A to 135A depending on specific conditions. The package is a flange-mount type with isolated case connection. Key electrical parameters include a maximum gate-emitter voltage of 20V and a typical saturation voltage of 2.2V. Operating temperatures range up to +125°C or +150°C in various documentation sources.

Feature Summary

• NPT IGBT technology for low saturation voltage
• Low switching losses
• Square RBSOA capability

Applications

• Induction heating processes
• Medium frequency applications
• GTO and IGBT snubbers

Procurement Notes

Verify the exact datasheet version when sourcing, as specifications like continuous current (90A vs 135A) and max temperature (+125°C vs +150°C) vary across different manufacturer publications. Confirm the flange-mount package style and isolated case requirement for your thermal management design before purchase.

Selection Notes

Select this component for high-efficiency power switching where fast response and low conduction loss are critical. The NPT technology ensures robust short-circuit withstand capability. Ensure the application voltage does not exceed 1200V and that the thermal solution supports the specified operating temperature limits.

Part Context

This module belongs to the IXYS MID series of insulated gate bipolar transistors. These modules are designed for industrial power electronics applications requiring high reliability and efficient energy conversion. The product line emphasizes square reverse bias safe operating area performance.

Replacement Considerations

Public confirmed substitute part numbers are not available in the provided source material.