MID200-12A4

Overview

The MID200-12A4 is an Insulated Gate Bipolar Transistor (IGBT) module manufactured by IXYS. It features a single N-channel configuration with a built-in diode, housed in a MODULE-7 flange mount package with five terminals. The device supports a maximum collector current of 330 A and a collector-emitter breakdown voltage of 1200 V. Typical saturation voltage is 2.2 V, with a maximum operating junction temperature of 150 °C.

Feature Summary

• High short-circuit safe operating area capability
• Square Reverse Bias Safe Operating Area (RBSOA)
• Isolated flange mount construction

Applications

• Industrial motor drives
• Inverter circuits
• Power supply systems

Procurement Notes

Verify the manufacturer datasheet to confirm electrical ratings and pinout compatibility before integration. Ensure thermal management solutions align with the specified maximum junction temperature limits for reliable operation under load conditions.

Selection Notes

Select this component for high-current applications requiring robust switching performance. Verify that the gate drive voltage does not exceed the maximum rating and that the system can handle the peak collector current without exceeding thermal constraints.

Part Context

This part belongs to the MID series of IGBT modules from IXYS, designed for medium to high-power industrial applications. The series typically offers optimized switching characteristics and ruggedness for demanding power electronics environments.

Replacement Considerations

Check for direct substitutes within the MID series or comparable IXYS modules with matching voltage and current ratings. Ensure pin compatibility and thermal interface requirements are met when considering alternative part numbers.