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The MID75-12A3 is an Insulated Gate Bipolar Transistor (IGBT) module manufactured by IXYS. It features a single N-channel configuration with a built-in diode, housed in a MODULE-7 package designed for flange mounting. The component supports a maximum collector-emitter voltage of 1200 V and a continuous collector current of 75 A. It operates within a temperature range from -55 °C to +150 °C. The device utilizes silicon technology and includes isolated case connections. Key electrical parameters include a typical saturation voltage of 2.2 V at rated conditions.
Verify the specific suffix 'A3' against the official datasheet to confirm pinout and mechanical dimensions. Check for End-of-Life status or discontinuation notices from IXYS prior to ordering. Ensure compatibility with existing heatsinking infrastructure due to the flange-mount requirement.
Select this module for applications requiring 1200V blocking voltage and 75A continuous current handling. Consider the thermal resistance characteristics of the MODULE-7 package when designing the cooling system. Verify gate drive requirements align with standard IGBT specifications.
The MID series represents IXYS's lineup of medium-power IGBT modules. These components are engineered for high reliability in industrial power conversion environments. The MID75-12A3 specifically targets designs needing compact solutions with integrated diode functionality for bridge rectifier or chopper configurations.
Direct replacements may include other IXYS modules with identical voltage and current ratings in similar packages, such as the MII75-12A3 or MDI75-12A3, provided pinouts match. Cross-referencing mechanical drawings is essential before substitution.