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Product Detailed Parameters
- Description：IGBT MODULES,E3
- Series：-
- Mfr：MCC (Micro Commercial Components)
- Package：Bulk
- IGBT Type：-
- Configuration：Half Bridge
- Vce(on) (Max) @ Vge, Ic：1.5V @ 15V, 600A
- Input：Standard
- NTC Thermistor：Yes
- Operating Temperature：-40°C ~ 175°C (TJ)
- Mounting Type：Chassis Mount
- Package / Case：Module
- Supplier Device Package：E3
- Voltage - Collector Emitter Breakdown (Max)：1200 V
- Current - Collector (Ic) (Max)：600 A
- Power - Max：3.26 kW
- Current - Collector Cutoff (Max)：1 mA
- Input Capacitance (Cies) @ Vce：44000 pF @ 25 V
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Overview
The MIF600R12E3TL-BP is a 1200V, 600A IGBT module manufactured by Micro Commercial Components. It features an integrated ultra-fast and soft recovery anti-parallel freewheeling diode (FWD). The device supports a maximum junction temperature of 175°C and offers high short-circuit capability for 10μs. Electrical characteristics include a collector-emitter saturation voltage of 1.50V at 25°C and a gate-emitter peak voltage of ±20V. The module incorporates low inductance packaging and includes an NTC thermistor for thermal monitoring.
Feature Summary
- Low switching losses with positive temperature coefficient for Vce(sat)
- Integrated ultra-fast and soft recovery anti-parallel FWD
- High short circuit capability up to 10 microseconds
- Low inductance package design
Applications
- High frequency switching applications
- Motion and servo control systems
- Uninterruptible power supplies (UPS)
- Welding machines
Procurement Notes
Verify the component against official MCC datasheets to confirm electrical ratings and pinout compatibility. Ensure the ordering suffix matches specific requirements, as the 'BP' designation indicates bulk packaging containing four pieces per box. Confirm RoHS compliance status and check for authorized distributor channels to guarantee genuine parts with full traceability.
Selection Notes
Select this module for high-power applications requiring robust short-circuit tolerance and efficient thermal management. The 175°C maximum junction temperature allows for higher operating margins compared to standard 150°C devices. Verify that the drive circuit can handle the specified gate charge and peak current requirements for optimal switching performance.
Part Context
This part belongs to the MIF series of IGBT modules from Micro Commercial Components. It utilizes silicon technology and is designed for industrial power electronics. The module integrates both the IGBT switch and the freewheeling diode into a single unit to minimize parasitic inductance and improve system reliability in demanding environments.
Replacement Considerations
Direct replacements must match the 1200V rating, 600A continuous current, and physical dimensions. Verify that substitute components offer comparable short-circuit withstand times and similar thermal resistance values to ensure proper heat sinking and system protection.
