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Product Detailed Parameters
- Description：IGBT MODULE 1700V 2400A E10
- Series：-
- Mfr：IXYS
- Package：Box
- IGBT Type：NPT
- Configuration：Single Switch
- Vce(on) (Max) @ Vge, Ic：2.6V @ 15V, 2400A
- Input：Standard
- NTC Thermistor：No
- Operating Temperature：-40°C ~ 125°C (TJ)
- Mounting Type：Chassis Mount
- Package / Case：E10
- Supplier Device Package：E10
- Voltage - Collector Emitter Breakdown (Max)：1700 V
- Current - Collector (Ic) (Max)：2400 A
- Power - Max：-
- Current - Collector Cutoff (Max)：120 mA
- Input Capacitance (Cies) @ Vce：230 nF @ 25 V
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Overview
The IXYS MIO2400-17E10 is a single-switch NPT IGBT module with an integrated anti-parallel diode, rated for 1700 V collector-emitter voltage and 2400 A continuous current at 80°C. It features a short-circuit operating area capability of 10 µs and a maximum junction temperature of 150°C. The device utilizes an AISiC baseplate and AlN substrate for high power cycling capacity and low thermal resistance. Key electrical parameters include a typical saturation voltage of 2.3 V and gate charge of 22 µC. The module weighs 1500 g and requires specific mounting torques for secure installation.
Feature Summary
- NPT IGBT technology providing low-loss operation and smooth switching waveforms for improved EMC performance
- Industry-standard package design incorporating an AISiC baseplate for robust power cycling and an AlN substrate to minimize thermal resistance
- Integrated short-circuit safe operating area (SOA) capability allowing operation under fault conditions
Applications
- AC power converters for industrial drives
- Windmill power conversion systems
- Traction applications
- Laser pulse generators
Procurement Notes
Verify component authenticity through authorized IXYS distributors or certified suppliers. Confirm the part number matches the official datasheet specifications exactly. Check for phase-out status as indicated in documentation. Ensure storage conditions meet specified temperature ranges. Request original manufacturer packaging to prevent handling damage during transit.
Selection Notes
Evaluate thermal management requirements against the specified junction-to-case thermal resistance values. Verify that the gate drive circuit can supply the required 22 µC gate charge efficiently. Ensure the application voltage does not exceed the 1700 V rating under transient conditions. Consider the 10 µs short-circuit withstand time when designing protection circuits. Match the mounting torque specifications to maintain optimal thermal contact.
Part Context
This component belongs to the MIO series of high-power IGBT modules from IXYS. The series is designed for demanding industrial power electronics applications requiring high current density and reliability. The E10 designation refers to the specific industry-standard package format used for these high-current devices.
Replacement Considerations
No public confirmed substitute part numbers are available in the provided documentation. Consult IXYS technical support for potential cross-references or updated series replacements.
