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The MIW40N120FLAHE3 is a Trench and Field Stop Insulated Gate Bipolar Transistor (IGBT) manufactured by Micro Commercial Components. It features an integrated fast and soft recovery anti-parallel Freewheeling Diode (FWD). The device supports a maximum collector-emitter voltage of 1200V and a continuous collector current of 40A at 25°C, with a pulsed current capability of 160A. It operates within a junction temperature range of -40°C to +175°C and utilizes a TO-247AB package. Key electrical parameters include a saturation voltage of 2.40V max at 25°C and a short circuit withstand time of 10μs.
Verify component authenticity through authorized MCC distributors or direct procurement channels. Counterfeit prevention measures are strictly enforced; products from unauthorized sources lack warranty coverage. Confirm the specific ordering suffix matches the required RoHS compliance and packaging configuration before finalizing purchase orders.
Select this component for applications requiring AEC-Q101 qualification and robust short-circuit tolerance. Ensure thermal management design accommodates the specified junction-to-case thermal resistance values. Verify that gate drive voltages remain within the ±20V transient limits to prevent device degradation during high-speed switching operations.
This IGBT belongs to the MIW40N120 series utilizing Trench and Field Stop technology. It is designed as a single discrete unit in a TO-247AB package. The product line emphasizes tight parameter distribution and high-temperature solder exemption capabilities for modern manufacturing processes.
Direct substitutes must match the 1200V/40A rating and TO-247AB footprint. Verify equivalent switching energy losses and reverse recovery characteristics if replacing the integrated diode function. Cross-reference AEC-Q101 certification requirements for automotive-specific replacements.