MIW60N65AS2Y-BP

Overview

The MIW60N65AS2Y-BP is a Trench and Field Stop Insulated Gate Bipolar Transistor manufactured by Micro Commercial Components. It features a 650V collector-emitter voltage rating and an 80A continuous collector current capability. The device is housed in a TO-247AB through-hole package, supporting up to 283W of power dissipation. This component utilizes trench gate technology for optimized switching performance.

Feature Summary

• Trench and Field Stop IGBT architecture
• Positive temperature coefficient for Vce(sat)
• High ruggedness design

Applications

• Hard switching applications
• Soft switching applications
• Motor control systems

Procurement Notes

Verify the specific suffix BP against the manufacturer's official documentation to ensure compliance with RoHS standards and lead-free requirements. Confirm that the TO-247AB package dimensions match your PCB footprint constraints. Cross-reference the part number with authorized MCC distributors to validate authenticity and supply chain integrity before finalizing procurement orders.

Selection Notes

Select this component when high-speed smooth switching is required for both hard and soft switching topologies. The positive temperature coefficient of the saturation voltage facilitates parallel operation without active current sharing circuits. Ensure the thermal management solution supports the 283W dissipation rating within the target operating environment.

Part Context

This part belongs to the MIW series of single IGBTs from Micro Commercial Components. It complements other variants like the MIW30N65AT2Y-BP, offering higher current capacity in the same TO-247AB form factor. The series focuses on robust discrete semiconductor solutions for industrial power electronics.

Replacement Considerations

Direct substitutes include the MIW30N65AT2Y-BP for lower current requirements. Verify pinout compatibility and thermal resistance parameters when considering alternative models from different manufacturers.