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The MIW60N65RA is a Trench and Field Stop IGBT rated for 650V collector-emitter voltage and 60A continuous DC collector current. It features a maximum short-circuit withstand time of 5μs at VGE=15V, VCC=400V, and Tj≤150℃. The device operates within a junction temperature range of -40°C to +175°C. Key electrical parameters include a typical VCE(sat) of 2.10V at 60A and 25℃, and a gate charge (QG) of 0.24μC. Thermal resistance from junction to case is 0.45°C/W for the IGBT and 1.05°C/W for the integrated diode.
Verify authenticity by purchasing directly from Micro Commercial Components or authorized distributors listed on their official website. Counterfeit parts pose significant risks; unauthorized sources do not provide warranty coverage or traceability. Confirm the specific ordering suffix '-BP' indicates tube packaging containing 30 pieces per tube before finalizing procurement orders.
Select this component for applications requiring high voltage blocking and robust short-circuit tolerance. Ensure thermal management design accounts for the specified junction-to-case thermal resistance values. Verify that the operating junction temperature remains within the -40°C to +175°C range during all operational phases to maintain reliability and meet datasheet specifications.
The MIW60N65RA belongs to MCC's lineup of Trench and Field Stop IGBTs. This technology combines low conduction losses with fast switching characteristics. The device integrates an anti-parallel diode, simplifying circuit design for inductive loads. It is housed in a TO-247AB package suitable for through-hole mounting in high-power electronic systems.
Publicly confirmed substitute part numbers are not available in the provided documentation. Engineers should consult MCC technical support or verify pin-compatible alternatives with matching voltage, current, and thermal ratings before implementing any cross-brand substitution.
The MIW60N65RA can withstand a short circuit for up to 5 microseconds under conditions of VGE=15V, VCC=400V, and Tj≤150℃.
Yes, the MIW60N65RA includes an integrated anti-parallel diode with specified forward voltage and reverse recovery characteristics.
The thermal resistance is 0.45°C/W for the IGBT junction to case and 1.05°C/W for the diode junction to case.