MIW75N65AH2Y-BP

Overview

The MIW75N65AH2Y-BP is an N-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by Micro Commercial Components. It utilizes silicon technology and is housed in a TO-247-3 package designed for through-hole mounting. The device supports a maximum collector-emitter voltage of 650 V and delivers a continuous collector current of 75 A at 25°C. Key electrical characteristics include a collector-emitter saturation voltage of 2.1 V, a gate-emitter voltage range of -30 V to +30 V, and a power dissipation capacity of 395 W. It operates within a temperature range of -40°C to +175°C.

Feature Summary

• High current handling capability with 75 A continuous collector current rating
• Robust thermal performance supporting up to 395 W power dissipation
• Wide operating junction temperature range extending to +175°C
• Standardized TO-247-3 through-hole packaging for reliable board integration

Applications

• Industrial motor drives and control systems
• Switched-mode power supplies (SMPS)
• Inverter circuits for renewable energy applications

Procurement Notes

Verify the specific suffix 'H2Y' against the manufacturer's datasheet to confirm exact binning or testing parameters, as variations may exist within the MIW75N65 series. Confirm RoHS compliance status directly with the supplier documentation. Ensure the TO-247-3 footprint matches the target PCB design requirements before finalizing procurement decisions.

Selection Notes

Select this component when a high-voltage, high-current IGBT is required for power switching applications. The 650 V rating suits medium-voltage AC/DC conversion tasks. Compare the 2.1 V saturation voltage against alternative devices to evaluate conduction losses. Ensure the thermal management solution can handle the 395 W dissipation rating under worst-case operating conditions.

Part Context

This part belongs to the MIW75N65 family of IGBTs from Micro Commercial Components. It shares the core 75 A / 650 V specifications with variants like the MIW75N65F-BP. Differences typically lie in internal cell architecture or specific testing criteria indicated by the suffix. Verify cross-compatibility with existing designs using the MIW75N65F-BP by reviewing detailed electrical curves.

Replacement Considerations

The MIW75N65F-BP is a documented variant within the same product family offering identical 75 A and 650 V ratings. Verify pinout compatibility and specific saturation voltage tolerances before substitution. No other public substitute part numbers are confirmed for this specific model.