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Product Detailed Parameters
- Description：IGBT TRENCH FS 650V 85A TO-247AB
- Series：-
- Mfr：MCC (Micro Commercial Components)
- Package：Tube
- IGBT Type：Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max)：650 V
- Current - Collector (Ic) (Max)：85 A
- Current - Collector Pulsed (Icm)：300 A
- Vce(on) (Max) @ Vge, Ic：1.75V @ 15V, 75A
- Power - Max：428 W
- Switching Energy：3.12mJ (on), 1.11mJ (off)
- Input Type：Standard
- Gate Charge：180 nC
- Td (on/off) @ 25°C：32ns/121ns
- Test Condition：400V, 75A, 10Ohm, 15V
- Reverse Recovery Time (trr)：160 ns
- Operating Temperature：-40°C ~ 175°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-247-3
- Supplier Device Package：TO-247AB
- Grade：-
- Qualification：-
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Overview
The MIW75N65AS2Y-BP is an N-channel Power MOSFET manufactured by Micro Commercial Components (MCC). It utilizes MDmesh M5 super-junction technology to achieve low on-resistance and high efficiency. The device features a Max247 package for robust thermal performance. Key electrical characteristics include a drain-source breakdown voltage of 650 V, a typical on-resistance of 12 mOhm, and a continuous drain current of 138 A. It is designed for hard switching applications requiring superior power conversion efficiency.
Feature Summary
- MDmesh M5 super-junction vertical process technology
- Extremely low on-resistance for high power applications
- Low gate charge and input capacitance
- Excellent switching performance
Applications
- High-power PFC topologies
- PWM topologies in hard switching applications
- Data center power supplies
- Solar microinverters
Procurement Notes
Verify the exact part number suffix against official MCC documentation to confirm pinout and packaging specifications. Confirm RoHS compliance status through the manufacturer's latest datasheet or product change notifications before procurement.
Selection Notes
Select this component for designs requiring high voltage handling with minimal conduction losses. Ensure the thermal management solution supports the Max247 package dissipation capabilities. Verify that the gate drive circuitry aligns with the specified gate charge requirements for optimal switching speeds.
Part Context
This model belongs to the MDmesh M5 series from STMicroelectronics, distributed by MCC. The series is characterized by super-junction technology optimized for 650V applications. It competes in the high-efficiency power MOSFET segment for industrial and consumer power supplies.
Replacement Considerations
Check for direct substitutes within the MDmesh M5 family with similar Rds(on) and current ratings. Verify package compatibility and thermal resistance values when considering alternative manufacturers' 650V super-junction MOSFETs.
