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The MIXA20WB1200TED is a silicon-based IGBT module from the IXYS MIXA20WB1200 series, utilizing XPT technology. It features a three-phase inverter configuration with screw mount installation in an E2-Pack housing. The device supports a maximum collector-emitter voltage of 1.2 kV and a gate-emitter voltage limit of 20 V. Continuous collector current ratings are specified at 17 A and 28 A under standard conditions. Power dissipation capabilities range from 60 W to 100 W depending on thermal conditions. The saturation voltage is 1.8 V, with a gate-emitter leakage current of 500 nA. Operating temperatures span from -40 C to +125 C.
Verify component authenticity through official manufacturer channels or authorized distributors. Confirm RoHS compliance status via current datasheets. Check for end-of-life notices as some listings indicate restricted availability. Ensure packaging matches bulk specifications. Validate part number suffixes against official documentation to confirm functional equivalence.
Select this module for applications requiring 1.2 kV blocking capability and moderate current handling. Evaluate thermal management requirements based on the 60 W to 100 W power dissipation range. Consider the E2-Pack form factor for compatibility with existing screw-mount heatsink solutions. Verify gate drive voltage limits do not exceed 20 V.
This component belongs to the MIXA20WB1200 series of IGBT modules manufactured by IXYS. The series utilizes XPT technology for improved switching characteristics. Other variants in the family include different current ratings such as MIXA10WB1200 and MIXA30WB1200, sharing similar voltage ratings and package styles.
MIXA20WB1200TML serves as a related variant within the same series. Cross-reference electrical parameters and pin configurations before substitution. Verify if package differences between E1 and E2 packs affect mechanical integration.