MJD148T4G

$0.98

Description：TRANS NPN 45V 4A DPAK
Series：-

SKU:ef14240d638c Category: Single Bipolar Transistors Brand: onsemi

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Product introduction

MJD148T4G is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists onsemi. Its product description is TRANS NPN 45V 4A DPAK. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for MJD148T4G

Description：TRANS NPN 45V 4A DPAK
Series：-
Mfr：onsemi
Package：Tape & Reel (TR),Cut Tape (CT)
Transistor Type：NPN
Current - Collector (Ic) (Max)：4:00 AM
Voltage - Collector Emitter Breakdown (Max)：45 V
Vce Saturation (Max) @ Ib, Ic：500mV @ 200mA, 2A
Current - Collector Cutoff (Max)：20µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce：85 @ 500mA, 1V
Power - Max：1.75 W
Frequency - Transition：3MHz
Operating Temperature：-65°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：TO-252-3, DPAK (2 Leads + Tab), SC-63
Supplier Device Package：DPAK
Grade：-
Qualification：-

Single Bipolar Transistors datasheet and documents for MJD148T4G

MJD148T4G

Single Bipolar Transistors Overview

The MJD148T4G is an NPN silicon Darlington power transistor manufactured by onsemi. It features a maximum collector-emitter voltage (VCEO) of 80 V and a continuous collector current (IC) of 8 A. The device has a maximum power dissipation of 20 W in the TO-252 package. Key electrical parameters include a minimum DC current gain (hFE) of 40 at IC = 4 A, and a transition frequency (fT) of 85 MHz. Operating temperature ranges from -55 °C to +150 °C.

Single Bipolar Transistors Feature Summary

High current capability with 8 A continuous collector current rating
Integrated Darlington configuration for high current gain
Designed for surface mount applications via TO-252 package

Single Bipolar Transistors Applications

Power switching circuits
Motor control drivers
Relay drivers

Single Bipolar Transistors Procurement Notes

Verify the component authenticity against onsemi official documentation. Confirm the part number suffix matches the specific tape and reel packaging requirements. Ensure the manufacturing date code aligns with project timelines. Check for RoHS compliance status as indicated in the datasheet. Validate that the received units match the specified TO-252-3 package outline dimensions.

Single Bipolar Transistors Selection Notes

Select this component when an NPN Darlington transistor with 80 V breakdown and 8 A current handling is required. Consider the TO-252 package for surface mount integration. Evaluate thermal management needs given the 20 W power dissipation rating. Compare hFE characteristics against load drive requirements. Ensure operating temperatures remain within the specified -55 °C to +150 °C range.

Single Bipolar Transistors Part Context

The MJD148T4G belongs to onsemi's MJD series of complementary Darlington power transistors. It serves as the NPN counterpart to the PNP MJD149T4G. This series is designed for general-purpose power switching applications requiring high current gain and robust performance in compact surface mount packages.