MJD200T5G

Single Bipolar Transistors Overview

The MJD200T5G is an NPN silicon power transistor in a DPAK (TO-252) surface-mount package. It supports continuous collector currents up to 5 A and peak currents of 10 A, with a collector-emitter voltage rating of 25 Vdc. The device dissipates 12.5 W at 25°C case temperature. Key electrical parameters include a minimum DC current gain of 70 at 500 mA and a current-gain-bandwidth product of 65 MHz. Operating junction temperatures range from -65°C to +150°C.

Single Bipolar Transistors Feature Summary

• Designed for low-voltage, low-power, high-gain audio amplifier applications
• Features annular construction for low leakage characteristics
• Lead formed specifically for surface mount applications in plastic sleeves
• Complementary PNP version available as the MJD210

Single Bipolar Transistors Applications

• Low voltage audio amplifiers
• General purpose switching circuits
• Power regulation stages

Single Bipolar Transistors Procurement Notes

Verify the specific ordering suffix against the manufacturer's official documentation to confirm shipping configuration. The datasheet lists MJD200RLG and MJD200T4G for tape and reel packaging, while MJD200G is listed on rails. Confirm that the T5G designation aligns with current production status and does not refer to a discontinued variant or non-standard packaging.

Single Bipolar Transistors Selection Notes

Select this component when a single NPN power transistor with a 25V rating and 5A continuous current capacity is required in a surface-mount form factor. Ensure thermal management meets the 10°C/W junction-to-case resistance requirement. Verify that the complementary PNP MJD210 is available if a push-pull output stage design is necessary.

Single Bipolar Transistors Part Context

This part belongs to the MJD200 series of complementary plastic power transistors manufactured by onsemi. The series includes the NPN MJD200 and the PNP MJD210. These devices are designed for surface mount applications using the DPAK package, offering a robust alternative to through-hole equivalents for modern PCB layouts requiring high current handling.

Single Bipolar Transistors Replacement Considerations

The MJD210 serves as the direct complementary replacement for the PNP side of the circuit. For pin-compatible replacements, verify that any substitute maintains the 25V VCEO rating and 5A IC limit within the DPAK package constraints.