Single Bipolar Transistors MJF44H11G product image

MJF44H11G

$2.33
  • Description:TRANS NPN 80V 10A TO-220FP
  • Series:-

SKU:d6df88fbacbf Category: Brand:

  
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MJF44H11G is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists onsemi. Its product description is TRANS NPN 80V 10A TO-220FP. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for MJF44H11G

  • Description:TRANS NPN 80V 10A TO-220FP
  • Series:-
  • Mfr:onsemi
  • Package:Tube
  • Transistor Type:NPN
  • Current - Collector (Ic) (Max):10:00 AM
  • Voltage - Collector Emitter Breakdown (Max):80 V
  • Vce Saturation (Max) @ Ib, Ic:1V @ 400mA, 8A
  • Current - Collector Cutoff (Max):1µA
  • DC Current Gain (hFE) (Min) @ Ic, Vce:40 @ 4A, 1V
  • Power - Max:2 W
  • Frequency - Transition:50MHz
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:TO-220-3 Full Pack
  • Supplier Device Package:TO-220FP
  • Grade:-
  • Qualification:-

Single Bipolar Transistors datasheet and documents for MJF44H11G

MJF44H11G

Single Bipolar Transistors Overview

The MJF44H11G is an NPN silicon bipolar junction transistor manufactured by onsemi, designed for general-purpose linear and switching applications. It utilizes low voltage multi epitaxial planar technology to achieve high gain performance and low saturation voltage. The device is housed in a TO-220FP-3 through-hole package with a maximum collector current of 10 A and a collector-emitter voltage rating of 80 V. Key electrical parameters include a power dissipation of 50 W, a transition frequency of 50 MHz, and a minimum DC current gain (hFE) of 60 at specified test conditions.

Single Bipolar Transistors Feature Summary

  • Low collector-emitter saturation voltage for improved efficiency
  • Fast switching speed suitable for dynamic circuit operations
  • High gain performance coupled with robust thermal characteristics

Single Bipolar Transistors Applications

  • General-purpose linear amplifier circuits
  • Power switching applications requiring moderate current handling
  • Audio output stages in consumer electronics

Single Bipolar Transistors Procurement Notes

Verify the specific datasheet revision and RoHS compliance status directly with onsemi or authorized distributors before integration. Confirm that the TO-220FP-3 package dimensions match your PCB footprint requirements. Ensure thermal management solutions are adequate for the 50 W power dissipation rating under actual operating conditions. Cross-reference part numbers to distinguish between tube and tape-and-reel packaging variants if applicable.

Single Bipolar Transistors Selection Notes

Select this component when a through-hole NPN transistor with 10 A continuous current capability is required. Compare against surface-mount alternatives like MJB44H11G if board space constraints dictate SMD packages. Evaluate thermal resistance values relative to your heatsinking strategy. Consider the 80 V breakdown voltage limit to ensure sufficient headroom for your supply rails.

Single Bipolar Transistors Part Context

This part belongs to the MJF44H11 series of low voltage NPN power transistors. It shares functional similarities with other members of the family but differs primarily in its physical package configuration. The TO-220FP-3 variant offers enhanced mechanical stability compared to standard TO-220 packages while maintaining comparable electrical performance metrics for industrial and commercial use cases.

Single Bipolar Transistors Replacement Considerations

Direct substitutes within the same series include MJF45H11G (PNP counterpart). For surface-mount needs, consider MJB44H11G. Verify pinout compatibility and thermal characteristics before swapping with generic equivalents.

MJF44H11GMJF44H11G
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