MMBD101LT1

Overview

The MMBD101LT1 is a single Schottky barrier rectifier manufactured by onsemi, housed in an SOT-23 (TO-236AB) surface-mount package. It utilizes silicon technology and features a maximum repetitive reverse voltage of 7 V and a forward current rating of 10 mA. The device exhibits a typical forward voltage of 600 mV and a maximum reverse current of 250 nA. It operates within a temperature range of -55 °C to +150 °C with a power dissipation capacity of 225 mW.

Feature Summary

• Schottky barrier construction for low forward voltage drop
• Silicon epitaxial planar design for reliability
• Surface-mount SOT-23 packaging for compact integration

Applications

• High-frequency signal detection
• RF mixer circuits
• Clamping applications in communication systems

Procurement Notes

Verify the specific suffix against official documentation, as the provided data references MMBD101LT1G. Confirm RoHS compliance status and manufacturing origin through the supplier's certified datasheet. Ensure the component matches the required SOT-23 pinout and thermal characteristics for the intended PCB layout.

Selection Notes

Select this component for low-voltage, high-speed switching applications requiring minimal forward voltage drop. Compare specifications against standard PN junction diodes to leverage the faster recovery characteristics inherent to Schottky technology. Ensure the 7 V reverse voltage rating exceeds the peak inverse voltage present in the circuit under all operating conditions.

Part Context

This device belongs to the MMBD101L series of small-signal Schottky diodes from onsemi. It is designed for ultra-high frequency applications where low capacitance and fast switching are critical. The series offers a compact alternative to larger discrete diodes while maintaining robust performance in sensitive RF environments.

Replacement Considerations

Publicly confirmed substitute part numbers were not identified in the provided source material.