RF Diode MMBD301LT1 product image

MMBD301LT1

$0.14
  • Description:DIODE SCHOTTKY 30V 200MW SOT23-3
  • Series:-

SKU:01b8a7dbd07f Category: Brand:

  
  • Quantity
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MMBD301LT1 is listed in the RF Diode range at ChipApex. The manufacturer field lists onsemi. Its product description is DIODE SCHOTTKY 30V 200MW SOT23-3. Review the specifications below when checking this part for your BOM.

RF Diode specifications for MMBD301LT1

  • Description:DIODE SCHOTTKY 30V 200MW SOT23-3
  • Series:-
  • Mfr:onsemi
  • Package:Tape & Reel (TR),Bulk
  • Diode Type:Schottky - Single
  • Voltage - Peak Reverse (Max):30V
  • Current - Max:-
  • Capacitance @ Vr, F:1.5pF @ 15V, 1MHz
  • Resistance @ If, F:-
  • Power Dissipation (Max):200 mW
  • Operating Temperature:-55°C ~ 125°C (TJ)
  • Package / Case:TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package:SOT-23-3 (TO-236)
  • Grade:-
  • Qualification:-

RF Diode datasheet and documents for MMBD301LT1

MMBD301LT1

RF Diode Overview

The MMBD301LT1G is a single silicon hot-carrier diode manufactured by onsemi, designed primarily for high-efficiency UHF and VHF detector applications. It features a Schottky barrier structure with a maximum repetitive peak reverse voltage of 30V and a forward current rating of 200mW. The device is housed in an SOT-563 surface-mount package, facilitating low-cost, high-volume integration into consumer and industrial circuits. Its fast switching characteristics make it suitable for RF detection and digital switching tasks.

RF Diode Feature Summary

  • Designed for high-efficiency UHF and VHF detector applications
  • Fast switching capability adaptable to RF and digital circuits
  • Schottky barrier construction for low forward voltage drop

RF Diode Applications

  • UHF and VHF signal detection
  • RF mixer applications
  • High-speed digital switching circuits

RF Diode Procurement Notes

Verify the complete part number including suffixes such as LT1G against official onsemi documentation to ensure correct packaging and compliance status. Confirm RoHS and halide-free specifications match project requirements. Cross-reference datasheet revisions to validate electrical parameters before finalizing procurement orders.

RF Diode Selection Notes

Select this component when a compact surface-mount Schottky diode is required for UHF/VHF detection or fast switching. Ensure the 30V reverse voltage rating exceeds the circuit's peak inverse voltage. Consider the SOT-563 footprint constraints during PCB layout design to maintain thermal and electrical performance standards.

RF Diode Part Context

This device belongs to the MBD301 family of silicon hot-carrier diodes from onsemi. It shares functional similarities with variants like MBD301G and MMBD301LT3G, differing primarily in packaging and reel specifications. These components are engineered for cost-effective mass production in consumer electronics and industrial control systems requiring reliable RF detection.

RF Diode Replacement Considerations

Direct substitutes include MMBD301LT3G and MBD301G, which share identical electrical characteristics but may differ in packaging type (tape/reel vs. TO-92). Verify pinout compatibility and thermal resistance differences when transitioning between surface-mount and through-hole variants in existing designs.

MMBD301LT1MMBD301LT1
$0.14
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