MMBD301LT1G

RF Diode Overview

The MMBD301LT1G is a single silicon hot-carrier diode manufactured by onsemi, housed in an SOT-23 surface-mount package. It features a maximum repetitive peak reverse voltage of 30 V and a DC forward current rating of 200 mA. The device exhibits a low maximum forward voltage drop of 1.25 V at 200 mA and a typical junction capacitance of 1.5 pF at zero bias. Designed for high-efficiency UHF and VHF detector applications, it operates within a temperature range of -55 °C to +150 °C.

RF Diode Feature Summary

• Engineered as a silicon hot-carrier diode optimized for high-efficiency UHF and VHF detection tasks.
• Capable of fast switching performance suitable for RF and digital circuit applications.
• Constructed in a compact plastic surface-mount package designed for automated assembly processes.

RF Diode Applications

• High-efficiency UHF detector circuits
• VHF detector circuits
• Fast switching RF applications
• Digital logic interface protection

RF Diode Procurement Notes

Verify the complete part number including the suffix LT1G against official onsemi documentation to ensure correct packaging and tape-and-reel specifications. Confirm RoHS compliance status and lead-free material declarations directly from the manufacturer's datasheet before procurement. Cross-reference the ordering information with authorized distributors to validate availability and authenticity.

RF Diode Selection Notes

Select this component when a single Schottky barrier diode with a 30 V reverse voltage rating is required for RF detection or fast switching. Ensure the application demands a forward current capability of at least 200 mA and fits within the thermal constraints of the SOT-23 package. Verify that the low junction capacitance meets the frequency requirements of the specific UHF or VHF design.

RF Diode Part Context

This device belongs to the MBD301 series of silicon hot-carrier diodes produced by onsemi. The series includes variants such as the through-hole MBD301G and other surface-mount options like the MMBD301LT3G. These components share similar electrical characteristics but differ in packaging formats to accommodate various manufacturing and spatial requirements in consumer and industrial electronics.

RF Diode Replacement Considerations

Direct substitutes include the MMBD301LT3G, which shares identical electrical specifications but utilizes a different reel packaging format. Other compatible devices within the same family include the MBD301G for through-hole applications. Verify pinout compatibility and thermal dissipation capabilities when substituting across different package types.