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MMBD330T1G is listed in the RF Diode range at ChipApex. The manufacturer field lists onsemi. Its product description is DIODE SCHOTTKY 30V 120MW SC70-3. Review the specifications below when checking this part for your BOM.
The MMBD330T1G is a dual common cathode switching diode manufactured by onsemi. It features two independent diodes integrated into a single SOT-23 surface-mount package. The device supports a maximum repetitive peak reverse voltage of 75 V and a continuous forward current of 200 mA per diode. It operates within a junction temperature range of -55 °C to +150 °C. Key electrical characteristics include a low forward voltage drop and fast switching capabilities, making it suitable for high-frequency applications.
Verify the specific ordering suffix T1G to confirm the reel packaging quantity and tape-and-reel format. Ensure the component matches the SOT-23 footprint dimensions during PCB layout review. Confirm RoHS compliance status through the manufacturer's official documentation before finalizing procurement specifications.
Select this component when space constraints require dual diodes in a small outline transistor package. Compare forward voltage specifications against circuit requirements to ensure efficiency. Verify that the 75 V reverse voltage rating exceeds the maximum expected reverse bias conditions in the target application environment.
This part belongs to onsemi's general-purpose switching diode portfolio. It utilizes standard silicon planar technology optimized for surface-mount assembly. The device serves as a replacement for legacy through-hole dual diodes in modern compact electronic designs requiring reliable rectification or signal processing functions.
Check pinout compatibility when substituting with other dual common cathode diodes in SOT-23 packages. Verify that alternative components meet or exceed the 75 V reverse voltage and 200 mA forward current ratings. Ensure thermal resistance characteristics are suitable for the intended power dissipation levels.
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