RF Diode MMBD330T1G product image

MMBD330T1G

$0.10
  • Description:DIODE SCHOTTKY 30V 120MW SC70-3
  • Series:-

SKU:0f044e74a7be Category: Brand:

  
  • Quantity
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MMBD330T1G is listed in the RF Diode range at ChipApex. The manufacturer field lists onsemi. Its product description is DIODE SCHOTTKY 30V 120MW SC70-3. Review the specifications below when checking this part for your BOM.

RF Diode specifications for MMBD330T1G

  • Description:DIODE SCHOTTKY 30V 120MW SC70-3
  • Series:-
  • Mfr:onsemi
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Diode Type:Schottky - Single
  • Voltage - Peak Reverse (Max):30V
  • Current - Max:200 mA
  • Capacitance @ Vr, F:1.5pF @ 15V, 1MHz
  • Resistance @ If, F:-
  • Power Dissipation (Max):120 mW
  • Operating Temperature:-55°C ~ 125°C (TJ)
  • Package / Case:SC-70, SOT-323
  • Supplier Device Package:SC-70-3 (SOT323)
  • Grade:-
  • Qualification:-

RF Diode datasheet and documents for MMBD330T1G

MMBD330T1G

RF Diode Overview

The MMBD330T1G is a dual common cathode switching diode manufactured by onsemi. It features two independent diodes integrated into a single SOT-23 surface-mount package. The device supports a maximum repetitive peak reverse voltage of 75 V and a continuous forward current of 200 mA per diode. It operates within a junction temperature range of -55 °C to +150 °C. Key electrical characteristics include a low forward voltage drop and fast switching capabilities, making it suitable for high-frequency applications.

RF Diode Feature Summary

  • Dual common cathode configuration in a compact SOT-23 package
  • High-speed switching performance with low forward voltage drop
  • Wide operating junction temperature range up to 150 °C

RF Diode Applications

  • DC-DC converter rectification
  • Signal demodulation circuits
  • Logic level shifting

RF Diode Procurement Notes

Verify the specific ordering suffix T1G to confirm the reel packaging quantity and tape-and-reel format. Ensure the component matches the SOT-23 footprint dimensions during PCB layout review. Confirm RoHS compliance status through the manufacturer's official documentation before finalizing procurement specifications.

RF Diode Selection Notes

Select this component when space constraints require dual diodes in a small outline transistor package. Compare forward voltage specifications against circuit requirements to ensure efficiency. Verify that the 75 V reverse voltage rating exceeds the maximum expected reverse bias conditions in the target application environment.

RF Diode Part Context

This part belongs to onsemi's general-purpose switching diode portfolio. It utilizes standard silicon planar technology optimized for surface-mount assembly. The device serves as a replacement for legacy through-hole dual diodes in modern compact electronic designs requiring reliable rectification or signal processing functions.

RF Diode Replacement Considerations

Check pinout compatibility when substituting with other dual common cathode diodes in SOT-23 packages. Verify that alternative components meet or exceed the 75 V reverse voltage and 200 mA forward current ratings. Ensure thermal resistance characteristics are suitable for the intended power dissipation levels.

MMBD330T1GMMBD330T1G
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