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The MMBD4448HSDW-7-G is a surface mount fast switching diode array manufactured by Diodes Incorporated. It features two dual common cathode configurations housed in an SOT-363 package. The device supports a maximum repetitive peak reverse voltage of 80 V and an average forward current of 250 mA per diode. Key electrical parameters include a maximum forward voltage of 1.25 V at 150 mA, a reverse leakage current of 100 nA at 70 V, and a rapid recovery time of 4 ns. The unit operates within a junction temperature range of -65°C to +150°C.
Verify the specific suffix against official manufacturer documentation to confirm compliance status and packaging details. Ensure the component matches the required pinout and thermal characteristics for the target application. Cross-reference the datasheet revision to validate electrical limits before finalizing procurement specifications.
Select this component when space constraints require a dual diode solution in a small footprint. The low reverse leakage and fast recovery make it suitable for high-frequency switching environments. Confirm that the 80V rating meets the circuit's peak inverse voltage requirements and that the SOT-363 package aligns with the PCB layout.
This part belongs to the MMBD4448 series of surface mount fast switching diode arrays from Diodes Incorporated. The series is designed for general-purpose switching applications requiring high conductance and low power dissipation. The HSDW variant specifically utilizes the SOT-363 package to provide multiple diode functions in a minimal board area.
Compatible substitutes include MMBD4448HCDW-7-F and MMBD4448HADW-7. Verify pin compatibility and electrical ratings before substitution.