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The MMBD4448HSDW-7 is a surface-mount fast switching diode array manufactured by Diodes Incorporated. It features a Double Dual Series configuration within an SOT-363 package. The device supports a maximum working peak reverse voltage of 80 V and a continuous forward current of 500 mA. Electrical characteristics include a maximum forward voltage of 1.25 V at 150 mA, a maximum reverse current of 100 nA at 70 V, and a fast reverse recovery time of 4 ns. Total capacitance is limited to 3.5 pF. Power dissipation is rated at 200 mW with a thermal resistance of 625 °C/W. Operating temperatures range from -55°C to +150°C.
Verify the specific ordering suffix '-7-F' against official Diodes Incorporated documentation to confirm tape and reel packaging quantities and compliance status. Ensure the selected variant matches the required series or parallel diode configuration for the target circuit design. Cross-reference datasheet revision DS30153 Rev. 20-2 for accurate mechanical and electrical specifications prior to final procurement.
Select this component when a dual-diode array in an SOT-363 package is required for space-constrained designs. The Double Dual Series configuration distinguishes it from common anode variants. Evaluate the 4 ns reverse recovery time and 3.5 pF capacitance limits to ensure compatibility with high-frequency signal integrity requirements. Confirm power dissipation capabilities align with the thermal management strategy of the host system.
This part belongs to the MMBD4448 family of surface-mount fast switching diode arrays produced by Diodes Incorporated. The family includes various configurations such as HCQW, HAQW, HADW, HCDW, and HTW, all sharing similar electrical performance profiles but differing in internal diode arrangements and physical package types like SOT-353 and SOT-363.
MMBD4448HADW-7-F
The MMBD4448HSDW-7 utilizes a Double Dual Series configuration, containing two pairs of diodes connected in series.
The maximum operating and storage temperature range extends up to +150°C.
With a maximum total capacitance of 3.5 pF measured at 6V reverse bias and 1.0 MHz, the device minimizes signal distortion in high-frequency switching applications.