RF Diode MMBD452LT1G product image

MMBD452LT1G

$0.14
  • Description:DIODE SCHOTTKY 30V 225MW SOT23-3
  • Series:-

SKU:fbbc9641926a Category: Brand:

  
  • Quantity
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MMBD452LT1G is listed in the RF Diode range at ChipApex. The manufacturer field lists onsemi. Its product description is DIODE SCHOTTKY 30V 225MW SOT23-3. Review the specifications below when checking this part for your BOM.

RF Diode specifications for MMBD452LT1G

  • Description:DIODE SCHOTTKY 30V 225MW SOT23-3
  • Series:-
  • Mfr:onsemi
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Diode Type:Schottky - 1 Pair Series Connection
  • Voltage - Peak Reverse (Max):30V
  • Current - Max:-
  • Capacitance @ Vr, F:1.5pF @ 15V, 1MHz
  • Resistance @ If, F:-
  • Power Dissipation (Max):225 mW
  • Operating Temperature:-55°C ~ 125°C (TJ)
  • Package / Case:TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package:SOT-23-3 (TO-236)
  • Grade:-
  • Qualification:-

RF Diode datasheet and documents for MMBD452LT1G

MMBD452LT1G

RF Diode Overview

The MMBD452LT1G is a surface-mount Schottky diode manufactured by onsemi, housed in a compact SOT-23 package with three pins. It features a dual configuration and operates within a peak reverse repetitive voltage (Vrrm) of 30 V. The device exhibits a maximum forward voltage (Vf) of 0.6 V and a peak reverse current (Ir) of 200 nA. It supports an operating temperature range from -55°C to 125°C. Physical dimensions are 3.04 mm in length and 1.01 mm in height. The component complies with Pb-Free and RoHS standards and meets the AEC-Q101 automotive qualification standard.

RF Diode Feature Summary

  • Dual Schottky barrier rectifier configuration for efficient signal processing
  • Automotive-grade reliability compliant with AEC-Q101 standards
  • Low forward voltage drop for improved power efficiency
  • Compact SOT-23 surface-mount packaging for space-constrained designs

RF Diode Applications

  • Automotive electronics systems requiring robust rectification
  • High-frequency signal detection circuits
  • Power supply rectification in low-voltage applications

RF Diode Procurement Notes

Verify the specific ordering suffix and tape-and-reel quantity against the manufacturer's latest datasheet before procurement. Confirm that the component meets all required environmental compliance standards, including RoHS and lead-free specifications, for the intended application environment. Ensure storage conditions adhere to moisture sensitivity level requirements to maintain device integrity prior to assembly.

RF Diode Selection Notes

Select this component when a dual Schottky diode with a 30 V rating is required in an SOT-23 package. Consider the 0.6 V forward voltage and 200 nA reverse current specifications for low-power signal applications. Verify thermal management capabilities given the 125°C maximum junction temperature limit. Ensure the automotive qualification aligns with system reliability targets.

RF Diode Part Context

The MMBD452LT1G belongs to the MMBD452LT1G series of small-signal Schottky diodes from onsemi. This series is designed for high-speed switching and rectification in compact electronic devices. The dual configuration allows for common cathode or common anode arrangements within a single footprint, optimizing board space in modern consumer and automotive electronics.

RF Diode Replacement Considerations

Consult official cross-reference guides for electrically equivalent dual Schottky diodes in SOT-23 packages with matching 30 V ratings. Verify pinout compatibility and thermal characteristics before substitution. No official substitute part numbers are listed in the provided documentation.

MMBD452LT1GMMBD452LT1G
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