MMBD6100LT1G

Overview

The MMBD6100LT1G is a small signal switching diode manufactured by onsemi, housed in an SOT-23-3 surface-mount package. It features a dual configuration with a peak reverse voltage of 70 V and a maximum forward current of 200 mA. The device supports a surge current of 500 mA and exhibits a fast recovery time of 4 ns. Electrical characteristics include a forward voltage of 1.1 V and a reverse current of 100 nA. It operates within a temperature range of -55 C to +150 C.

Feature Summary

• Dual configuration for compact circuit integration
• Fast switching capability with 4 ns recovery time
• High thermal stability up to 150 C junction temperature

Applications

• General purpose signal switching
• High-speed digital circuits
• Clamping and protection applications

Procurement Notes

Verify the complete part number including the suffix LT1G to ensure correct packaging and compliance status. Confirm RoHS compliance details through official manufacturer documentation before procurement. Check specific datasheet revisions for any updates to electrical limits or handling instructions.

Selection Notes

Select this component when a dual diode arrangement is required in a minimal footprint SOT-23-3 package. Consider its 70 V reverse voltage rating and 200 mA forward current capacity for low-power switching tasks. Evaluate the 4 ns recovery time against system speed requirements to ensure adequate performance for high-frequency signals.

Part Context

This component belongs to the MMBD6100L series of small signal switching diodes from onsemi. It is designed for general-purpose applications requiring fast switching speeds in a compact surface-mount form factor. The dual configuration allows for efficient use of board space in complex electronic designs.

Replacement Considerations

Consult official substitution guides for compatible alternatives. Verify pinout compatibility and electrical parameter equivalence before replacing the original component in existing designs.