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The MMBD7000-HE3-08 is a silicon epitaxial planar diode array manufactured by Vishay General Semiconductor. It features a dual configuration housed in an SOT-23 surface-mount package. The device supports a maximum DC reverse voltage of 100 V and a forward current of 200 mA. Key electrical characteristics include a maximum forward voltage of 1.1 V at 100 mA and a reverse leakage current of 3 µA. The component operates within a temperature range of -55°C to +150°C junction temperature and exhibits a fast switching recovery time of 4 ns.
Verify the specific ordering suffix matches the required packaging format, such as cut tape or reel quantities. Confirm that the AEC-Q101 qualification status aligns with automotive project requirements if applicable. Ensure the SOT-23 footprint dimensions are compatible with the target PCB design before finalizing procurement orders.
Select this component when a dual diode solution is required in a minimal surface-mount footprint. The 100 V reverse voltage rating provides adequate margin for low-voltage signal processing tasks. Consider the 4 ns switching speed for applications where rapid transition times are critical to system performance and signal integrity.
This part belongs to the MMBD7000 series of small-signal switching diodes from Vishay. It represents a standard general-purpose dual diode variant optimized for automated assembly processes. The HE3 designation indicates a specific environmental and material compliance standard within the manufacturer's product portfolio.
MMBD7000LT3G serves as a verified alternative from onsemi offering identical electrical specifications and pinout compatibility.