SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The EVVO MMBD7000L is a dual switching diode housed in an SOT-23 surface-mount package. It features a peak repetitive reverse voltage of 100 V and an average rectified output current of 200 mA. The device exhibits a typical forward voltage of 1.1 V at 100 mA and a reverse recovery time of 4 ns. Diode capacitance is typically 2 pF at 0 V bias. Power dissipation is rated at 225 mW with a thermal resistance of 556 °C/W. Operating junction temperature reaches 150 °C, with a storage range from -55 °C to 150 °C.
Verify the manufacturer designation matches EVVO specifications rather than standard industry equivalents like onsemi or Fairchild. Confirm the specific datasheet revision (Rev:2022A2) aligns with project requirements. Ensure the SOT-23 footprint dimensions match the provided outline drawing before finalizing procurement orders.
Select this component for designs requiring compact dual-diode solutions with fast switching characteristics. The 100 V rating supports moderate voltage isolation needs. Verify that the 200 mA continuous current limit meets circuit load requirements. Consider the 225 mW power dissipation capability when designing thermal management strategies for dense PCB layouts.
This part belongs to the family of small-signal silicon switching diodes designed for high-speed applications. The dual configuration integrates two independent diodes into a single three-terminal package, optimizing board space. The SOT-23 form factor ensures compatibility with standard automated assembly processes used in modern electronics manufacturing.
Cross-reference with MMBD7000LT1G or MMBD7000LT3G for pin-compatible alternatives. Verify electrical parameters such as reverse recovery time and forward voltage against original specifications to ensure functional equivalence in existing circuit designs.