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Product Detailed Parameters
- Description：DIODE ARR GP 100V 200MA SOT23-3
- Series：-
- Mfr：onsemi
- Package：Tape & Reel (TR),Cut Tape (CT)
- Diode Configuration：1 Pair Series Connection
- Technology：Standard
- Voltage - DC Reverse (Vr) (Max)：100 V
- Current - Average Rectified (Io) (per Diode)：200mA (DC)
- Voltage - Forward (Vf) (Max) @ If：1.1 V @ 100 mA
- Speed：Small Signal =< 200mA (Io), Any Speed
- Reverse Recovery Time (trr)：4 ns
- Current - Reverse Leakage @ Vr：3 µA @ 100 V
- Operating Temperature - Junction：-55°C ~ 150°C
- Mounting Type：Surface Mount
- Package / Case：TO-236-3, SC-59, SOT-23-3
- Supplier Device Package：SOT-23-3 (TO-236)
- Grade：-
- Qualification：-
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Overview
The MMBD7000LT1G is a dual switching diode manufactured by onsemi, housed in an SOT-23 (TO-236) surface-mount package. It features a maximum reverse voltage of 100 V and a continuous forward current rating of 200 mA per diode. The device exhibits a peak reverse recovery time of 4 ns and a maximum forward voltage of 1.1 V at 100 mA. Operating temperatures range from -55°C to +150°C.
Feature Summary
- Dual series-connected configuration with a common cathode/anode terminal for compact circuit integration
- Optimized for high-speed switching applications through minimized reverse recovery time
- Compliant with automotive qualification standards including AEC-Q101
Applications
- Automotive electronic systems requiring qualified components
- General-purpose power management circuits
- Safety-related logic and signal processing applications
Procurement Notes
Verify the specific ordering suffix against official documentation to confirm packaging quantity and tape-and-reel specifications. Confirm that the component meets RoHS compliance and halogen-free requirements as stated in the datasheet. Ensure the selected variant aligns with the required thermal dissipation characteristics for the intended operating environment.
Selection Notes
Select this component when a dual diode solution is required within a three-terminal SOT-23 footprint. Consider the 100 V reverse voltage limit and 200 mA forward current capability relative to circuit demands. Evaluate the 4 ns recovery time suitability for high-frequency switching operations compared to standard rectifier alternatives.
Part Context
This part belongs to the MMBD7000L family of dual switching diodes produced by onsemi. The LT1G suffix indicates a specific manufacturing lot and packaging format compatible with automated surface-mount assembly processes. It serves as a specialized discrete semiconductor component designed for efficient signal handling in constrained board spaces.
Replacement Considerations
MMBD7000LT3G
FAQ
What is the pin configuration for the MMBD7000LT1G?
Pin 1 is the Anode, Pin 2 is the Cathode/Anode connection, and Pin 3 is the Cathode.
Is the MMBD7000LT1G suitable for automotive applications?
Yes, the device is AEC-Q101 qualified and PPAP capable for automotive and other demanding applications.
What is the maximum junction temperature for this device?
The maximum junction and storage temperature range extends up to +150°C.
