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Product Detailed Parameters
- Description：JFET N-CH 30V SOT23-3
- Series：-
- Mfr：onsemi
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Voltage - Breakdown (V(BR)GSS)：30 V
- Drain to Source Voltage (Vdss)：30 V
- Current - Drain (Idss) @ Vds (Vgs=0)：5 mA @ 15 V
- Current Drain (Id) - Max：-
- Voltage - Cutoff (VGS off) @ Id：500 mV @ 10 nA
- Input Capacitance (Ciss) (Max) @ Vds：14pF @ 15V
- Resistance - RDS(On)：100 Ohms
- Power - Max：225 mW
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：TO-236-3, SC-59, SOT-23-3
- Supplier Device Package：SOT-23-3 (TO-236)
- Grade：-
- Qualification：-
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Overview
The MMBF4393LT1G is an N-channel Junction Field-Effect Transistor (JFET) manufactured by onsemi. It features a Drain-Source Voltage (VDS) of 30 Vdc and a Gate-Source Breakdown Voltage (V(BR)GSS) of 30 Vdc. The Zero-Gate-Voltage Drain Current (IDSS) ranges from 5.0 mAdc to 30 mAdc at VDS = 15 Vdc. Static Drain-Source On-Resistance (rDS(on)) is specified at 100 Ohms for ID = 1.0 mAdc. Input Capacitance (Ciss) is 14 pF at VDS = 0 Vdc and VGS = -15 Vdc. The device operates within a junction temperature range of -55°C to +150°C.
Feature Summary
- Designed specifically for analog switching and chopper applications
- Utilizes silicon technology in a compact SOT-23 surface-mount package
- Compliant with RoHS standards and free of lead, halogens, and brominated flame retardants
Applications
- Analog switches
- Chopper circuits
- Signal routing
Procurement Notes
Verify the complete part number including the 'G' suffix to ensure Pb-Free compliance. Confirm the specific marking code 'M6G' matches the physical component received. Check the datasheet revision history for any updates to electrical characteristics or thermal ratings before finalizing design specifications.
Selection Notes
Select this component when a low leakage current and defined on-resistance are required for signal path control. The MMBF4393L variant offers a lower IDSS range compared to the MMBF4391L and MMBF4392L counterparts. Ensure the driving circuit can handle the necessary gate-source voltage swing to fully deplete the channel for optimal isolation.
Part Context
This device belongs to the MMBF439xL family of N-channel JFETs. It shares the same SOT-23 (TO-236) mechanical outline and maximum voltage ratings as the MMBF4391L and MMBF4392L. The primary distinction lies in the zero-gate-voltage drain current (IDSS) and corresponding gate-source cutoff voltage (VGS(off)), which define the specific switching thresholds for each model.
Replacement Considerations
MMBF4393LT3G
FAQ
What is the pin configuration for the MMBF4393LT1G?
Pin 1 is the Drain, Pin 2 is the Source, and Pin 3 is the Gate.
How does the IDSS of the MMBF4393L compare to other models in the series?
The MMBF4393L has the lowest IDSS range (5.0 to 30 mA) among the MMBF4391L, MMBF4392L, and MMBF4393L devices.
Is the MMBF4393LT1G suitable for high-frequency switching?
Yes, it exhibits low input capacitance (14 pF) and reverse transfer capacitance (3.5 pF), supporting fast switching times as detailed in the typical characteristics graphs.
