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Product Detailed Parameters
- Description：JFET N-CH 40V SOT23-3
- Series：-
- Mfr：onsemi
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Voltage - Breakdown (V(BR)GSS)：40 V
- Drain to Source Voltage (Vdss)：-
- Current - Drain (Idss) @ Vds (Vgs=0)：10 mA @ 15 V
- Current Drain (Id) - Max：-
- Voltage - Cutoff (VGS off) @ Id：1.2 V @ 1 nA
- Input Capacitance (Ciss) (Max) @ Vds：16pF @ 15V
- Resistance - RDS(On)：-
- Power - Max：350 mW
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：TO-236-3, SC-59, SOT-23-3
- Supplier Device Package：SOT-23-3
- Grade：-
- Qualification：-
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Overview
The MMBF5103 is an N-channel Junction Field-Effect Transistor (JFET) manufactured by onsemi. It features a maximum drain-source breakdown voltage of 40 V and a power dissipation rating of 350 mW. The device operates within a temperature range of -55°C to +150°C TJ. Key electrical characteristics include a gate-source cutoff voltage of 1.2 V at 1 nA drain current and a typical zero-bias drain-source current of 10 mA at 15 V. Input capacitance is specified as a maximum of 16 pF at 15 V. The component is housed in a surface-mount SOT-23-3 package.
Feature Summary
- N-channel JFET configuration for analog signal processing
- High input impedance suitable for low-noise applications
- Surface-mount SOT-23-3 packaging for compact designs
Applications
- Low-noise amplifier circuits
- Impedance conversion stages
- Analog switch and chopper applications
Procurement Notes
Verify the specific ordering suffix against official datasheets, as suffixes may indicate variations in tape-and-reel quantities or marking layouts. Confirm RoHS compliance status and material declarations via the manufacturer's declaration database. Ensure the selected variant matches the required thermal and electrical specifications for the target application environment.
Selection Notes
Select this component when an N-channel JFET with a 40 V breakdown voltage and SOT-23-3 footprint is required. Consider the 350 mW power dissipation limit and the -55°C to +150°C operating temperature range during thermal design. Verify that the input capacitance and gate-source cutoff voltage meet the circuit's noise and biasing requirements.
Part Context
The MMBF5103 belongs to the MMBF51 series of JFETs from onsemi. These devices are designed for general-purpose analog applications requiring high input impedance and low noise. The series includes complementary P-channel variants and other N-channel options with different current ratings, all sharing similar packaging and functional characteristics for system flexibility.
Replacement Considerations
Publicly confirmed substitute part numbers are not available in the provided documentation. Engineers should consult official cross-reference guides or contact onsemi technical support for verified alternatives.
