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The MMBF5459 is an N-channel Junction Field-Effect Transistor (JFET) manufactured by onsemi, housed in a surface-mount SOT-23-3 package. It features a maximum drain-source voltage of 25 V and a gate-source breakdown voltage of -25 V. The device operates with a gate-source cutoff voltage of -8 V and supports a drain-source current range of 6 mA to 13 mA at zero gate bias. Power dissipation is rated at 350 mW, with an operating temperature range spanning from -55 °C to +150 °C.
Verify the component status as obsolete before procurement planning. Confirm that the SOT-23-3 package dimensions align with existing PCB footprints. Ensure supply chain sources provide authentic onsemi products to avoid counterfeit risks associated with discontinued parts. Validate technical specifications against current design requirements prior to finalizing orders.
Select this component for designs requiring small-form-factor N-channel JFETs with low-voltage operation. Consider the specific pinch-off voltage characteristics for precise analog control. Evaluate thermal management needs given the 350 mW power rating in a compact package. Compare performance against available active replacements if long-term availability is critical.
This part belongs to the MMBF5457/5458/5459 series of N-channel JFETs from onsemi. These devices are designed for low-noise analog applications and are sourced from Process 55 technology. The series provides consistent electrical characteristics suitable for precision signal handling in consumer and industrial electronics.
Public confirmed substitute part numbers: MMBF5457, MMBF5458.