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Product Detailed Parameters
- Description：SS N-CHAN 25V SOT23
- Series：*
- Mfr：onsemi
- Package：Cut Tape (CT)
- FET Type：-
- Voltage - Breakdown (V(BR)GSS)：-
- Drain to Source Voltage (Vdss)：-
- Current - Drain (Idss) @ Vds (Vgs=0)：-
- Current Drain (Id) - Max：-
- Voltage - Cutoff (VGS off) @ Id：-
- Input Capacitance (Ciss) (Max) @ Vds：-
- Resistance - RDS(On)：-
- Power - Max：-
- Operating Temperature：-
- Mounting Type：-
- Package / Case：-
- Supplier Device Package：-
- Grade：-
- Qualification：-
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Overview
The onsemi MMBF5484LT1 is an N-channel RF MOSFET and JFET device housed in a SOT-23-3 surface-mount package. It operates with a drain-gate voltage rating of 25V and a gate-source voltage limit of -25V. The component supports junction temperatures up to 150°C and features a thermal resistance of 556°C/W in ambient conditions. Electrical characteristics include a gate-source cutoff voltage range of -0.3V to -3.0V at VDS=15V, ID=10nA, and a zero-gate voltage drain current between 4.0mA and 5.0mA.
Feature Summary
- Designed for electronic switching applications such as low on-resistance analog switches
- Features interchangeable source and drain terminals within the SOT-23 package
- Manufactured using Process 50 technology for reliable RF performance
Applications
- Low on-resistance analog switching circuits
- Electronic signal routing systems
- RF amplifier input stages
Procurement Notes
Verify the specific suffix LT1 against official datasheets to confirm tape-and-reel packaging specifications. Ensure compatibility with Process 50 manufacturing standards. Confirm RoHS compliance status through material declaration documents prior to integration into final assemblies.
Selection Notes
Select this component when designing circuits requiring N-channel RF amplification or switching with SOT-23 footprint constraints. Evaluate the -0.3V to -3.0V cutoff voltage range against logic level requirements. Consider the 556°C/W thermal resistance for ambient cooling designs without active heat sinking.
Part Context
This part belongs to the MMBF5484/5485/5486 family of N-channel devices. These components share similar Process 50 construction but differ in threshold voltage ranges. The MMBF5484 variant specifically targets applications requiring lower gate drive voltages compared to higher-threshold siblings.
Replacement Considerations
MMBFJ309LT1G and MMBFJ310LT1G are documented direct substitutes from onsemi. Verify pinout compatibility and electrical parameter alignment before substitution.
