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Product Detailed Parameters
- Description：JFET N-CH 25V SOT23-3
- Series：-
- Mfr：onsemi
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Voltage - Breakdown (V(BR)GSS)：25 V
- Drain to Source Voltage (Vdss)：-
- Current - Drain (Idss) @ Vds (Vgs=0)：80 mA @ 15 V
- Current Drain (Id) - Max：-
- Voltage - Cutoff (VGS off) @ Id：3 V @ 10 nA
- Input Capacitance (Ciss) (Max) @ Vds：-
- Resistance - RDS(On)：8 Ohms
- Power - Max：350 mW
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：TO-236-3, SC-59, SOT-23-3
- Supplier Device Package：SOT-23-3
- Grade：-
- Qualification：-
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Overview
The MMBFJ108 is a single N-channel Junction Field-Effect Transistor (JFET) manufactured by onsemi. It is designed for switching applications and utilizes silicon technology in a surface-mount SOT-23 package. Key electrical parameters include a gate-source breakdown voltage of -25 V, a gate-source cutoff voltage of -10 V, and a drain-source current of 10 mA at Vgs=0. The device features an on-resistance of 8 Ohms and a power dissipation rating of 350 mW. It operates within a temperature range from -55°C to +150°C.
Feature Summary
- N-channel configuration optimized for switching functions
- Compact SOT-23 surface-mount packaging for space-constrained designs
- Silicon-based construction ensuring reliable performance across wide temperature ranges
Applications
- Electronic signal switching circuits
- Low-noise amplifier input stages
- Analog multiplexer implementations
Procurement Notes
Verify the specific ordering suffix against official datasheets to confirm exact packaging and tape-and-reel specifications. Ensure compliance with RoHS directives as indicated in manufacturer documentation. Cross-reference part numbers such as MMBFJ108_NL for alias accuracy. Confirm thermal management requirements align with the 350 mW dissipation limit during integration.
Selection Notes
Select this component when a low on-resistance JFET switch is required in a small footprint. The 8 Ohm resistance suits applications needing efficient signal path control. Consider the -25 V breakdown voltage for appropriate biasing margins. Evaluate the SOT-23 package compatibility with existing PCB layouts before finalizing the design choice.
Part Context
This device belongs to the MMBFJ108 series of discrete JFETs produced by onsemi. It serves as a fundamental building block for analog signal processing tasks. The product line focuses on providing robust switching capabilities in miniature packages suitable for modern electronic assemblies requiring high density and reliability.
Replacement Considerations
Consult official substitution guides for compatible alternatives. Verify pinout compatibility and electrical parameter equivalence before replacing the original component in existing designs.
