ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：JFET N-CH 35V SOT23-3
- Series：-
- Mfr：onsemi
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Voltage - Breakdown (V(BR)GSS)：35 V
- Drain to Source Voltage (Vdss)：-
- Current - Drain (Idss) @ Vds (Vgs=0)：5 mA @ 15 V
- Current Drain (Id) - Max：-
- Voltage - Cutoff (VGS off) @ Id：1 V @ 1 µA
- Input Capacitance (Ciss) (Max) @ Vds：-
- Resistance - RDS(On)：50 Ohms
- Power - Max：350 mW
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：TO-236-3, SC-59, SOT-23-3
- Supplier Device Package：SOT-23-3
- Grade：-
- Qualification：-
Download product information
Overview
The MMBFJ112 is a single N-channel Junction Field-Effect Transistor (JFET) manufactured by onsemi, housed in a surface-mount SOT-23-3L package. Designed for low-level analog switching applications, it features a gate-source cutoff voltage of 1V and a maximum gate-source breakdown voltage of 35V. The device supports a drain-source current of 5mA with an on-resistance of 50Ω. It operates within a temperature range of -55°C to +150°C and has a power dissipation rating of 350mW.
Feature Summary
- Designed specifically for low-level analog switching, sample and hold circuits, and chopper stabilized amplifiers
- Source and drain terminals are electrically interchangeable, simplifying circuit layout
- Manufactured using Process 51 technology for consistent performance
Applications
- Low level analog switching
- Sample and hold circuits
- Chopper stabilized amplifiers
Procurement Notes
Verify the specific ordering suffix and packaging configuration when placing orders, as availability may vary between tape-and-reel and cut-tape formats. Confirm that the component meets RoHS compliance requirements if mandated by your assembly standards. Cross-reference the datasheet revision date to ensure alignment with current manufacturing specifications before finalizing procurement contracts.
Selection Notes
Select this component when a compact N-channel JFET switch is required for precision analog signal paths. The interchangeability of source and drain pins offers flexibility in PCB routing compared to non-interchangeable variants. Ensure the application voltage does not exceed the 35V breakdown limit and that the thermal design accommodates the 350mW dissipation capability in the SOT-23 package.
Part Context
This part belongs to the MMBF series of small-signal JFETs from onsemi, which are widely used in consumer and industrial electronics. The MMBFJ112 specifically targets applications requiring precise analog switching with minimal signal distortion. It serves as a surface-mount alternative to through-hole JFETs like the J112, maintaining similar electrical characteristics while enabling automated assembly processes.
Replacement Considerations
Publicly documented substitutes include SST112 from Linear Integrated Systems and IFN160BST3TR from InterFET. Verify pin compatibility and electrical parameter tolerances before substitution.
