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Product Detailed Parameters
- Description：JFET P-CH 30V SOT23-3
- Series：-
- Mfr：onsemi
- Package：Bulk
- FET Type：P-Channel
- Voltage - Breakdown (V(BR)GSS)：30 V
- Drain to Source Voltage (Vdss)：-
- Current - Drain (Idss) @ Vds (Vgs=0)：1.5 mA @ 15 V
- Current Drain (Id) - Max：-
- Voltage - Cutoff (VGS off) @ Id：800 mV @ 10 nA
- Input Capacitance (Ciss) (Max) @ Vds：-
- Resistance - RDS(On)：-
- Power - Max：225 mW
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：TO-236-3, SC-59, SOT-23-3
- Supplier Device Package：SOT-23-3
- Grade：-
- Qualification：-
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Overview
The MMBFJ177_G is a single P-Channel Junction Field-Effect Transistor (JFET) manufactured by onsemi. It utilizes silicon technology and is housed in an SOT-23-3 surface-mount package. The device operates in depletion mode with a gate-source breakdown voltage of 30 V. The drain-source current at zero gate-source voltage ranges from 1.5 mA to 20 mA. Key electrical characteristics include a maximum power dissipation of 225 mW, a drain-source on-resistance of 300 Ohms, and a gate-source cutoff voltage of 2.5 V. The component supports an operating temperature range from -55°C to +150°C.
Feature Summary
- Single-channel P-Channel JFET configuration for signal processing
- Silicon-based construction ensuring stable depletion mode operation
- SOT-23-3 surface-mount packaging for compact circuit integration
Applications
- Low-noise amplifier circuits
- Impedance conversion stages
- Analog switch applications
- Chopper stabilization systems
Procurement Notes
Verify the specific suffix G against official manufacturer documentation to confirm exact binning or tape-and-reel specifications. Confirm RoHS compliance status through current datasheets. Ensure the sourcing channel provides valid traceability for the onsemi brand. Cross-reference the part number with authorized distributor catalogs to validate active status and availability constraints.
Selection Notes
Select this component when a small-signal P-Channel JFET is required for low-noise analog applications. The SOT-23-3 package suits space-constrained designs. Verify that the 300 Ohm on-resistance and 225 mW power dissipation meet the specific circuit requirements. Ensure the 1.5 mA to 20 mA IDSS range aligns with the intended biasing conditions.
Part Context
This device belongs to the MMBFJ177L series of small-signal JFETs. It serves as a discrete semiconductor solution for analog signal conditioning. The product line focuses on providing reliable performance for audio and instrumentation applications where low noise and high input impedance are critical design parameters.
Replacement Considerations
The MMBFJ177LT1G is a verified equivalent variant within the same family. Check datasheet compatibility regarding pinout and electrical tolerances before substitution.
