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MMBT2222ALT1HTSA1 is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is TRANS NPN 40V 0.6A PG-SOT23. Review the specifications below when checking this part for your BOM.
The Infineon Technologies MMBT2222ALT1HTSA1 is an NPN silicon switching transistor housed in a PG-SOT23 surface-mount package. It supports a maximum collector-emitter voltage of 40 V and a continuous collector current of 600 mA. The device features a transition frequency of 300 MHz and a total power dissipation of 330 mW at case temperatures up to 77 °C. Key electrical characteristics include a DC current gain ranging from 35 to 300, a collector-emitter saturation voltage of 1 V at 500 mA, and a junction temperature rating of 150 °C.
Verify the specific ordering suffix HTSA1 against official Infineon documentation to confirm tape-and-reel packaging quantities and lead times. Confirm that the component meets all required environmental and automotive qualification standards before finalizing procurement specifications.
Select this component for designs requiring a compact SOT-23 footprint with high-speed switching capabilities. Ensure the thermal management strategy accommodates the 330 mW power dissipation limit and verify that the 40 V breakdown voltage aligns with the circuit's operating conditions.
This part belongs to the SMBT2222A/MMBT2222A series of NPN silicon switching transistors manufactured by Infineon Technologies. It is designed for general-purpose use in both linear and switching applications within a small surface-mount form factor suitable for automated assembly processes.
The complementary PNP counterpart is the SMBT2907A or MMBT2907A. Verify pinout compatibility and electrical parameters when substituting with other manufacturers' equivalents.
The maximum collector-base voltage (VCBO) is 75 V.
Yes, the component is qualified according to AEC Q101 standards.
The typical collector-base capacitance (Ccb) is 2.5 pF at VCB = 10 V and f = 1 MHz.
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