Single Bipolar Transistors MMBT2222ALT1HTSA1 product image

MMBT2222ALT1HTSA1

  • Description:TRANS NPN 40V 0.6A PG-SOT23
  • Series:-

SKU:60423aaccb17 Category: Brand:

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MMBT2222ALT1HTSA1 is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is TRANS NPN 40V 0.6A PG-SOT23. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for MMBT2222ALT1HTSA1

  • Description:TRANS NPN 40V 0.6A PG-SOT23
  • Series:-
  • Mfr:Infineon Technologies
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Transistor Type:NPN
  • Current - Collector (Ic) (Max):600 mA
  • Voltage - Collector Emitter Breakdown (Max):40 V
  • Vce Saturation (Max) @ Ib, Ic:1V @ 50mA, 500mA
  • Current - Collector Cutoff (Max):10nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce:100 @ 150mA, 10V
  • Power - Max:330 mW
  • Frequency - Transition:300MHz
  • Operating Temperature:150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package:PG-SOT23
  • Grade:-
  • Qualification:-

Single Bipolar Transistors datasheet and documents for MMBT2222ALT1HTSA1

MMBT2222ALT1HTSA1

Single Bipolar Transistors Overview

The Infineon Technologies MMBT2222ALT1HTSA1 is an NPN silicon switching transistor housed in a PG-SOT23 surface-mount package. It supports a maximum collector-emitter voltage of 40 V and a continuous collector current of 600 mA. The device features a transition frequency of 300 MHz and a total power dissipation of 330 mW at case temperatures up to 77 °C. Key electrical characteristics include a DC current gain ranging from 35 to 300, a collector-emitter saturation voltage of 1 V at 500 mA, and a junction temperature rating of 150 °C.

Single Bipolar Transistors Feature Summary

  • Low collector-emitter saturation voltage for efficient switching performance
  • Qualified according to AEC Q101 automotive standards
  • Complementary PNP type available as SMBT2907A / MMBT2907A
  • Pb-free RoHS compliant packaging

Single Bipolar Transistors Applications

  • General purpose switching applications
  • Automotive electronics systems
  • Linear low-power surface mount circuits

Single Bipolar Transistors Procurement Notes

Verify the specific ordering suffix HTSA1 against official Infineon documentation to confirm tape-and-reel packaging quantities and lead times. Confirm that the component meets all required environmental and automotive qualification standards before finalizing procurement specifications.

Single Bipolar Transistors Selection Notes

Select this component for designs requiring a compact SOT-23 footprint with high-speed switching capabilities. Ensure the thermal management strategy accommodates the 330 mW power dissipation limit and verify that the 40 V breakdown voltage aligns with the circuit's operating conditions.

Single Bipolar Transistors Part Context

This part belongs to the SMBT2222A/MMBT2222A series of NPN silicon switching transistors manufactured by Infineon Technologies. It is designed for general-purpose use in both linear and switching applications within a small surface-mount form factor suitable for automated assembly processes.

Single Bipolar Transistors Replacement Considerations

The complementary PNP counterpart is the SMBT2907A or MMBT2907A. Verify pinout compatibility and electrical parameters when substituting with other manufacturers' equivalents.

Single Bipolar Transistors FAQ

What is the maximum collector-base voltage for this transistor?

The maximum collector-base voltage (VCBO) is 75 V.

Does this component meet automotive quality standards?

Yes, the component is qualified according to AEC Q101 standards.

What is the typical collector-base capacitance?

The typical collector-base capacitance (Ccb) is 2.5 pF at VCB = 10 V and f = 1 MHz.

MMBT2222ALT1HTSA1MMBT2222ALT1HTSA1

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