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Product Detailed Parameters
- Description：RF TRANS NPN 15V 600MHZ SOT-23-3
- Series：-
- Mfr：onsemi
- Package：Tape & Reel (TR)
- Transistor Type：NPN
- Voltage - Collector Emitter Breakdown (Max)：15V
- Frequency - Transition：600MHz
- Noise Figure (dB Typ @ f)：-
- Gain：-
- Power - Max：225mW
- DC Current Gain (hFE) (Min) @ Ic, Vce：30 @ 3mA, 1V
- Current - Collector (Ic) (Max)：10mA
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：TO-236-3, SC-59, SOT-23-3
- Supplier Device Package：SOT-23-3
- Grade：-
- Qualification：-
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Overview
The MMBT5770 is an NPN RF transistor manufactured by Fairchild Semiconductor, designed for use in RF amplifiers, oscillators, and multipliers. It operates within a collector current range of 1.0 mA to 30 mA. The device features a Collector-Base Voltage (VCBO) of 30 V, a Collector-Emitter Voltage (VCEO) of 15 V, and an Emitter-Base Voltage (VEBO) of 4.5 V. It has a maximum continuous collector current of 10 mA and a total device dissipation of 225 mW at 25°C. The Current Gain Bandwidth Product (fT) is 600 MHz at IC = 4.0 mA and VCE = 10 V. The component is housed in a SOT-23 package.
Feature Summary
- Designed specifically for RF amplifier, oscillator, and multiplier applications
- Optimized for operation with collector currents between 1.0 mA and 30 mA
- Utilizes process technology sourced from production line 43
Applications
- RF Amplifiers
- Oscillators
- Multipliers
Procurement Notes
Verify the manufacturer status as Fairchild Semiconductor products may be managed under onsemi distribution channels. Confirm datasheet revision Rev. 1.0.0 matches design requirements. Ensure thermal derating calculations account for the 1.8 mW/°C rating above 25°C ambient temperature. Validate that the SOT-23 package footprint aligns with PCB layout specifications.
Selection Notes
Select this component when designing circuits requiring an NPN RF transistor with a 600 MHz transition frequency. Ensure the operating collector current remains within the specified 1.0 mA to 30 mA range for optimal performance. Verify that the 15 V collector-emitter voltage limit accommodates the circuit's peak voltage swings without exceeding absolute maximum ratings.
Part Context
The MMBT5770 belongs to the family of small-signal NPN RF transistors produced by Fairchild Semiconductor. It is packaged in a standard SOT-23 plastic case, suitable for surface-mount assembly. The device was originally documented in February 2008, indicating its establishment in the market for medium-frequency RF applications.
Replacement Considerations
Check for direct equivalents from other manufacturers offering similar fT and voltage ratings in SOT-23 packages. Verify pinout compatibility before substitution. Consider updated generations if available, ensuring electrical parameters meet or exceed the original specifications.
