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The MMBT918LT1G is a small-signal NPN bipolar junction transistor manufactured by onsemi. It features a maximum collector current of 50 mA and a collector-emitter voltage rating of 15 V. The device is housed in an SOT-23 surface-mount package with three pins. Key electrical characteristics include a DC current gain (hFE) ranging from 100 to 300 at a collector current of 2 mA, and a collector-base breakdown voltage (V_CBO) of 60 V. The component operates within a temperature range of -55°C to +150°C and has a maximum power dissipation of 310 mW.
Verify the complete part number suffix, as 'LT1' typically denotes specific tape-and-reel packaging or manufacturing lot codes rather than a change in electrical function. Confirm RoHS compliance status through official manufacturer documentation prior to integration. Ensure that the ordering quantity aligns with standard reel sizes to avoid unnecessary cut-tape fees or minimum order constraints during procurement.
Select this component when a low-voltage, high-gain NPN transistor is required for general-purpose switching or amplification. Compare against alternatives like the 2N3904 if through-hole mounting is necessary, or consider the MMBT3904 for similar performance in the same package. Verify that the 15 V collector-emitter voltage rating meets the circuit's peak operating requirements to prevent breakdown under transient conditions.
This component belongs to onsemi's family of small-signal bipolar junction transistors designed for low-power applications. It serves as a common replacement for legacy through-hole devices in modern surface-mount designs. The MMBT series is widely used in consumer electronics and industrial control systems where compact size and reliable switching characteristics are prioritized over high-power handling capabilities.
Publicly confirmed substitutes include the MMBT3904LT1G and the BC847B series. These parts offer comparable electrical characteristics and pin configurations, facilitating direct board-level replacements without requiring schematic modifications.