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Product Detailed Parameters
- Description：RF TRANS NPN 25V 650MHZ SOT23-3
- Series：*
- Mfr：Diodes Incorporated
- Package：Cut Tape (CT)
- Transistor Type：-
- Voltage - Collector Emitter Breakdown (Max)：-
- Frequency - Transition：-
- Noise Figure (dB Typ @ f)：-
- Gain：-
- Power - Max：-
- DC Current Gain (hFE) (Min) @ Ic, Vce：-
- Current - Collector (Ic) (Max)：-
- Operating Temperature：-
- Mounting Type：-
- Package / Case：-
- Supplier Device Package：-
- Grade：-
- Qualification：-
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Overview
The MMBTH10 is a VHF/UHF NPN bipolar junction transistor manufactured by Diodes Incorporated, housed in an SOT-23 surface-mount package. It features a collector-emitter breakdown voltage (BVCEO) of 25V and a collector-base breakdown voltage (BVCBO) of 30V. The device supports a continuous collector current (IC) of 50mA with a power dissipation rating of 350mW at +25°C ambient temperature. Electrical characteristics include a DC current gain (hFE) of 60 at IC=4mA, a saturation voltage (VCE(sat)) below 500mV at IC=4mA, and a current gain-bandwidth product (fT) of 650MHz. Operating temperatures range from -65°C to +150°C.
Feature Summary
- Optimized for high-frequency performance with a 650MHz gain-bandwidth product suitable for VHF/UHF applications.
- Provides low saturation voltage under moderate drive conditions to improve switching efficiency.
- Constructed using lead-free, halogen-free, and antimony-free materials compliant with RoHS directives.
Applications
- VHF/UHF amplifiers
- High output VHF oscillators
- RF amplifiers
Procurement Notes
Verify the specific ordering suffix when purchasing. The datasheet lists MMBTH10-13 as the standard reel quantity variant. Confirm that the received component matches the required packaging format and marking code K3Y before integration into production lines.
Selection Notes
Select this component for circuits requiring a 25V NPN switch or amplifier operating up to UHF frequencies. Ensure the design accommodates the 350mW thermal limit and verify that the base drive current can achieve the specified low saturation voltage during switching operations.
Part Context
This part belongs to the MMBTH series of small-signal transistors designed for general-purpose RF and switching tasks. It serves as a compact solution for space-constrained designs requiring reliable high-frequency operation within standard consumer and industrial electronics.
Replacement Considerations
Check for the automotive-compliant variant MMBTH10Q if AEC-Q101 qualification is required. Verify pinout compatibility and electrical limits against other SOT-23 NPN transistors before substituting.
FAQ
Is the MMBTH10 qualified for automotive applications?
No, the standard MMBTH10 is not automotive qualified. An automotive-compliant version is available under the separate part number MMBTH10Q.
What is the maximum collector current for this transistor?
The maximum continuous collector current (IC) is rated at 50mA.
Does the MMBTH10 meet environmental compliance standards?
Yes, it is totally lead-free, fully RoHS compliant, and halogen and antimony free.
