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The MMBTH10M3T5G is an NPN VHF/UHF transistor manufactured by onsemi, housed in a SOT-723 surface mount package. It features a collector-emitter voltage (VCEO) of 25 Vdc and a collector-base voltage (VCBO) of 30 Vdc. The device has a maximum power dissipation of 265 mW on an FR-5 board at 25°C. Electrical characteristics include a DC current gain (hFE) minimum of 60 at IC = 4.0 mAdc and VCE = 10 Vdc, and a transition frequency (fT) of 650 MHz at the same bias conditions. Thermal resistance from junction to ambient is 470 °C/W on FR-5 substrate.
Verify component authenticity through authorized distribution channels or direct manufacturer verification. Confirm RoHS compliance status and check for specific packaging requirements such as tape and reel specifications. Review the latest datasheet revision history for any updates to electrical parameters or mechanical dimensions before finalizing procurement orders.
Select this component for designs requiring small form factor NPN transistors operating in the VHF/UHF range. Ensure the application voltage does not exceed the 25 Vdc collector-emitter rating. Consider the thermal constraints of the SOT-723 package, particularly the 265 mW dissipation limit on standard FR-5 boards, when designing high-reliability systems.
The MMBTH10M3T5G is part of the MMBTH10 series, derived from the popular SOT-23 three-leaded device family. It serves as a spin-off designed specifically for surface mount technologies. The 'M3' suffix indicates lead-free and halide-free manufacturing compliance, while 'T5G' denotes the specific tape and reel packaging configuration with a quantity of 8000 units per reel.
Public confirmed substitute part numbers are not available in the provided documentation.