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The MMBTRC113SS is a surface-mount digital NPN transistor manufactured by Diotec Semiconductor, housed in an SOT-23 (TO-236) package. It integrates a bias resistor with a typical value of 100 kΩ to simplify circuit design and reduce component count. The device supports a maximum collector current of 100 mA and a collector-emitter voltage of 50 V, with a total power dissipation rating of 200 mW at 25°C ambient temperature. Key electrical characteristics include a minimum DC current gain (hFE) of 120 at VCE = 5 V and IC = 1 mA, and a transition frequency (fT) of 250 MHz at VCE = 10 V and IC = 5 mA. The operating junction temperature range spans from -55°C to +150°C.
Verify the specific suffix when ordering. The standard commercial grade lacks automotive qualification. The -Q suffix indicates AEC-Q101 compliance, while -AQ denotes full qualification. Confirm the required reliability grade matches the target application environment before procurement to ensure regulatory and performance alignment.
Select this component for designs requiring a compact NPN switch with integrated base resistance. The 100 kΩ internal resistor suits moderate drive currents. Ensure the PCB copper pad area meets the 3 mm² specification per terminal to maintain the rated 200 mW power dissipation capability without exceeding thermal limits.
This part belongs to the MMBTRC11xSS series of SMD digital transistors from Diotec Semiconductor. The series covers various resistor values (e.g., 4.7 kΩ to 100 kΩ) within the same SOT-23 footprint. The MMBTRC113SS specifically provides the 100 kΩ configuration, offering a standardized solution for high-impedance base driving requirements in commercial and industrial electronics.
Cross-reference with other manufacturers' NPN digital transistors featuring a 100 kΩ base resistor and SOT-23 packaging. Verify that substitute parts match the 50 V VCEO, 100 mA ICO, and 200 mW Ptot ratings. Check if the alternative offers equivalent hFE and fT specifications to ensure functional compatibility.