MMBTRC116SS

MMBTRC116SS

$0.03
  • Description:BIASED BJT SOT-23 NPN 1000OHM
  • Series:-

SKU:0357b083240a Category: Brand:

  
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Product Detailed Parameters

  • Description:BIASED BJT SOT-23 NPN 1000OHM
  • Series:-
  • Mfr:Diotec Semiconductor
  • Package:Bulk
  • Resistors Included:R1 and R2
  • Transistor Type:NPN - Pre-Biased
  • Current - Collector (Ic) (Max):100 mA
  • Voltage - Collector Emitter Breakdown (Max):50 V
  • Resistor - Base (R1):1 kOhms
  • Resistor - Emitter Base (R2):10 kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce:33 @ 10mA, 5V
  • Vce Saturation (Max) @ Ib, Ic:-
  • Current - Collector Cutoff (Max):500nA
  • Frequency - Transition:250 MHz
  • Power - Max:200 mW
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Package / Case:TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package:SOT-23-3 (TO-236)

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MMBTRC116SS

Overview

The MMBTRC116SS is a surface-mount digital NPN transistor manufactured by Diotec Semiconductor, housed in an SOT-23 (TO-236) package. It features integrated bias resistors with values of R1 = 1 kΩ and R2 = 10 kΩ. The device supports a maximum output voltage (VO) of 50 V and a continuous output current (IO) of 100 mA, with a total power dissipation (Ptot) of 200 mW at 25°C ambient temperature. The junction temperature range spans from -55°C to +150°C. Electrical characteristics include a minimum DC current gain (GI) of 33 at VO = 5 V and IO = 10 mA, a transition frequency (fT) of 250 MHz, and an output cutoff current (IO(off)) of 500 nA maximum.

Feature Summary

  • Integrated bias resistor combinations enable cost and space savings by eliminating the need for external input resistors.
  • Compliant with RoHS directives without exemptions, REACH regulations, and conflict minerals requirements.

Applications

  • Digital controls
  • Switching circuits
  • Signal processing

Procurement Notes

Verify component authenticity through authorized distributors or direct manufacturer channels. Confirm that the specific ordering suffix matches the required qualification grade, as standard commercial versions differ from AEC-Q101 compliant or qualified variants. Ensure storage conditions remain within specified limits to maintain moisture sensitivity level 1 integrity prior to soldering.

Selection Notes

Select this component when a compact NPN digital transistor with a 1 kΩ base resistor and 10 kΩ emitter resistor is required. Verify that the 50 V collector-emitter voltage rating and 100 mA current capacity align with circuit demands. Consider the 250 MHz transition frequency for high-speed switching applications and ensure thermal management accommodates the 200 mW power dissipation limit.

Part Context

This part belongs to the MMBTRC series of SMD digital NPN transistors produced by Diotec Semiconductor. The series includes multiple resistor combination variants, such as the MMBTRC117SS through MMBTRC121SS, which share identical electrical ratings but differ in internal resistor values. All variants utilize the same SOT-23 package and are designed for standard commercial and industrial applications.

Replacement Considerations

Direct substitutes within the same family include MMBTRC117SS, MMBTRC118SS, MMBTRC119SS, MMBTRC120SS, and MMBTRC121SS. These parts share identical voltage, current, and package specifications but feature different internal resistor ratios. Verify that the alternative resistor values meet the specific biasing requirements of the target circuit design.

MMBTRC116SSMMBTRC116SS
$0.03
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