MMBV109LT1

MMBV109LT1

  • Description:DIODE TUNING SS 30V SOT23
  • Series:*

SKU:dcf39c6917a2 Category: Brand:

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Product Detailed Parameters

  • Description:DIODE TUNING SS 30V SOT23
  • Series:*
  • Mfr:onsemi
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Capacitance @ Vr, F:-
  • Capacitance Ratio:-
  • Capacitance Ratio Condition:-
  • Voltage - Peak Reverse (Max):-
  • Diode Type:-
  • Q @ Vr, F:-
  • Operating Temperature:-
  • Grade:-
  • Qualification:-
  • Mounting Type:-
  • Package / Case:-
  • Supplier Device Package:-

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MMBV109LT1

Overview

The MMBV109LT1 is a silicon epitaxial planar voltage variable capacitance diode designed for general frequency control and tuning applications. It serves as a solid-state replacement for mechanical tuning methods. The device is housed in an SOT-23 surface mount package. Key electrical characteristics include a reverse breakdown voltage of 30 Vdc, a forward current rating of 200 mAdc, and a maximum power dissipation of 200 mW at 25°C. At a reverse voltage of 3.0 Vdc and a frequency of 1.0 MHz, the diode capacitance ranges from 26 pF to 32 pF. The figure of merit (Q) at 50 MHz is guaranteed to be a minimum of 200.

Feature Summary

  • High Q with guaranteed minimum values at VHF frequencies
  • Controlled and uniform tuning ratio
  • Available in surface mount packages

Applications

  • General frequency control
  • Tuning applications
  • Solid-state replacement for mechanical tuning methods

Procurement Notes

Verify the specific ordering suffix when purchasing. The 'G' suffix indicates a lead-free package variant. Confirm the shipping configuration matches project requirements, as options include tape and reel or bag packaging depending on the exact part number selected.

Selection Notes

Select this component for circuits requiring reliable solid-state tuning at VHF frequencies. Ensure the operating reverse voltage does not exceed the 30 Vdc limit. Consider the thermal derating curve if ambient temperatures exceed 25°C to maintain safe junction temperature levels within the specified range.

Part Context

This component belongs to the MMBV109/MV209 family of silicon epitaxial diodes. The MV209 designation refers to the through-hole TO-92 version of the same device. Both variants share identical electrical specifications but differ in physical package style and mounting method.

Replacement Considerations

MMBV109LT1G

FAQ

What is the pinout configuration for the SOT-23 package?

Pin 1 is the Anode, Pin 2 is No Connection, and Pin 3 is the Cathode.

How is the capacitance ratio defined for this device?

The capacitance ratio (CR) is defined as the ratio of diode capacitance measured at 3 Vdc divided by the capacitance measured at 25 Vdc at a frequency of 1.0 MHz.

What is the typical diode capacitance temperature coefficient?

The typical temperature coefficient is 300 ppm/°C, measured at a reverse voltage of 3.0 Vdc and a frequency of 1.0 MHz.

MMBV109LT1MMBV109LT1

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