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The MMBV109LT1 is a silicon epitaxial planar voltage variable capacitance diode designed for general frequency control and tuning applications. It serves as a solid-state replacement for mechanical tuning methods. The device is housed in an SOT-23 surface mount package. Key electrical characteristics include a reverse breakdown voltage of 30 Vdc, a forward current rating of 200 mAdc, and a maximum power dissipation of 200 mW at 25°C. At a reverse voltage of 3.0 Vdc and a frequency of 1.0 MHz, the diode capacitance ranges from 26 pF to 32 pF. The figure of merit (Q) at 50 MHz is guaranteed to be a minimum of 200.
Verify the specific ordering suffix when purchasing. The 'G' suffix indicates a lead-free package variant. Confirm the shipping configuration matches project requirements, as options include tape and reel or bag packaging depending on the exact part number selected.
Select this component for circuits requiring reliable solid-state tuning at VHF frequencies. Ensure the operating reverse voltage does not exceed the 30 Vdc limit. Consider the thermal derating curve if ambient temperatures exceed 25°C to maintain safe junction temperature levels within the specified range.
This component belongs to the MMBV109/MV209 family of silicon epitaxial diodes. The MV209 designation refers to the through-hole TO-92 version of the same device. Both variants share identical electrical specifications but differ in physical package style and mounting method.
MMBV109LT1G
Pin 1 is the Anode, Pin 2 is No Connection, and Pin 3 is the Cathode.
The capacitance ratio (CR) is defined as the ratio of diode capacitance measured at 3 Vdc divided by the capacitance measured at 25 Vdc at a frequency of 1.0 MHz.
The typical temperature coefficient is 300 ppm/°C, measured at a reverse voltage of 3.0 Vdc and a frequency of 1.0 MHz.