MMD835-E28

RF Diode Overview

The MMD835-E28 is a silicon step recovery diode from the MMDx & SMMDx Series, packaged in the E28 ceramic configuration. It features a minimum voltage breakdown of 15 V and a total capacitance range of 0.38 pF to 0.88 pF. The device exhibits a typical transition time of 50 ps with a maximum of 70 ps, and a lifetime parameter ranging from 10 ns to 20 ns. Designed for millimeter wave multiplication and picosecond pulse forming, it utilizes a fully passivated true mesa construction.

RF Diode Feature Summary

• Features industry-fastest transition times suitable for millimeter wave multiplication and picosecond pulse forming applications
• Utilizes fully passivated, true mesa construction to ensure sharp transitions and improved operational stability
• Offers optional screening per MIL-PRF-19500 and MIL-PRF-38534 standards for high-reliability requirements

RF Diode Applications

• Low and moderate power multipliers with output frequencies up to 40+ GHz
• High-order multipliers such as comb generators
• Picosecond pulse forming circuits

RF Diode Procurement Notes

Verify the specific package suffix against official MACOM documentation to confirm physical dimensions and electrical tolerances. Confirm that the ordering suffix does not alter the fundamental device function unless explicitly stated in the datasheet. Ensure compliance with absolute maximum ratings regarding forward current and thermal resistance during integration.

RF Diode Selection Notes

Select this component when low junction capacitance and fast transition times are required for harmonic generation. Compare the 15 V breakdown voltage against circuit biasing needs. Evaluate the 0.38 pF to 0.88 pF capacitance range for impedance matching at target frequencies. Consider the E28 package outline for PCB layout constraints.

RF Diode Part Context

This part belongs to the MMDx series of silicon step recovery diodes manufactured by MACOM Technology Solutions. The series includes chip, beam lead, ceramic packaged, glass packaged, and plastic packaged variants. The MMD835-E28 specifically denotes the ceramic packaged version designed for high-frequency microwave and millimeter-wave applications.

RF Diode Replacement Considerations

The MMD835-C11 serves as the equivalent chip-level variant within the same series. Other ceramic packaged alternatives include the MMD835-H20, MMD835-T86, MMD835-T89, and MMD835-0805-2. Verify package compatibility and electrical parameters before substitution.

RF Diode FAQ

What is the typical transition time for the MMD835-E28?

The typical transition time is 50 ps, with a maximum specified value of 70 ps under test conditions of IF = 10 mA and VR = 10 V.

What is the total capacitance range for this device?

The total capacitance (CT) ranges from a minimum of 0.38 pF to a maximum of 0.88 pF, measured at VR = 6 V and 1 MHz.

Is MIL-PRF-19500 screening available for this component?

Yes, screening per MIL-PRF-19500 and MIL-PRF-38534 is available for the MMDx series components upon request.