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MMDB35-0402 is listed in the RF Diode range at ChipApex. The manufacturer field lists MACOM Technology Solutions. Its product description is RF DIODE STANDARD 16V 250MW 0402. Review the specifications below when checking this part for your BOM.
The MMDB35-0402 is a silicon step recovery diode from the MMDx & SMMDx Series, designed for millimeter wave multiplication and picosecond pulse forming. It features a fully passivated true mesa construction with beam lead termination in an 0402 ceramic package. Key electrical specifications include a minimum breakdown voltage of 16 V, junction capacitance ranging from 0.18 pF to 0.22 pF, and a typical transition time of 35 ps (maximum 45 ps). The device supports a forward current of 50 mA and operates within a temperature range of -65°C to +175°C.
Verify the specific ordering suffix matches the required package variant, as the datasheet lists both 0402 and 0805-2 options for the MMDB35 model. Confirm that any military screening requirements align with the available MIL-PRF-19500 or MIL-PRF-38534 options before finalizing procurement.
Select this component when a low junction capacitance and fast transition time are critical for mmWave signal processing. Ensure the drive conditions meet the test parameters (IF = 3 mA, VR = 7 V) to achieve the specified 35 ps transition time. Consider thermal derating if operating near the maximum junction temperature limits.
This part belongs to the MACOM MMDx & SMMDx series of silicon step recovery diodes. The series includes chip, beam lead, ceramic packaged, glass packaged, and plastic packaged variants. The MMDB35 specifically utilizes a beam lead configuration optimized for high-speed switching performance compared to standard packaged alternatives.
Direct replacements within the same series include MMDB30-B11 and MMDB45-B11, which offer different breakdown voltages and capacitance values. Verify that the alternative part's transition time and capacitance specifications meet the circuit requirements.
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