RF Diode MMDB35-0402 product image

MMDB35-0402

$37.79
  • Description:RF DIODE STANDARD 16V 250MW 0402
  • Series:MMDx

SKU:e34356603443 Category: Brand:

  
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MMDB35-0402 is listed in the RF Diode range at ChipApex. The manufacturer field lists MACOM Technology Solutions. Its product description is RF DIODE STANDARD 16V 250MW 0402. Review the specifications below when checking this part for your BOM.

RF Diode specifications for MMDB35-0402

  • Description:RF DIODE STANDARD 16V 250MW 0402
  • Series:MMDx
  • Mfr:MACOM Technology Solutions
  • Package:Tray
  • Diode Type:Standard - Single
  • Voltage - Peak Reverse (Max):16V
  • Current - Max:50 mA
  • Capacitance @ Vr, F:0.22pF @ 6V, 1MHz
  • Resistance @ If, F:-
  • Power Dissipation (Max):250 mW
  • Operating Temperature:-65°C ~ 175°C
  • Package / Case:0402 (1005 Metric)
  • Supplier Device Package:402
  • Grade:-
  • Qualification:-

RF Diode datasheet and documents for MMDB35-0402

MMDB35-0402

RF Diode Overview

The MMDB35-0402 is a silicon step recovery diode from the MMDx & SMMDx Series, designed for millimeter wave multiplication and picosecond pulse forming. It features a fully passivated true mesa construction with beam lead termination in an 0402 ceramic package. Key electrical specifications include a minimum breakdown voltage of 16 V, junction capacitance ranging from 0.18 pF to 0.22 pF, and a typical transition time of 35 ps (maximum 45 ps). The device supports a forward current of 50 mA and operates within a temperature range of -65°C to +175°C.

RF Diode Feature Summary

  • Beam lead design providing industry-fast transition times for high-frequency applications
  • Fully passivated true mesa construction ensuring sharp transitions and improved stability
  • Available screening per MIL-PRF-19500 and MIL-PRF-38534 standards

RF Diode Applications

  • Millimeter wave frequency multiplication
  • Picosecond pulse forming circuits
  • Gaussian pulse generation

RF Diode Procurement Notes

Verify the specific ordering suffix matches the required package variant, as the datasheet lists both 0402 and 0805-2 options for the MMDB35 model. Confirm that any military screening requirements align with the available MIL-PRF-19500 or MIL-PRF-38534 options before finalizing procurement.

RF Diode Selection Notes

Select this component when a low junction capacitance and fast transition time are critical for mmWave signal processing. Ensure the drive conditions meet the test parameters (IF = 3 mA, VR = 7 V) to achieve the specified 35 ps transition time. Consider thermal derating if operating near the maximum junction temperature limits.

RF Diode Part Context

This part belongs to the MACOM MMDx & SMMDx series of silicon step recovery diodes. The series includes chip, beam lead, ceramic packaged, glass packaged, and plastic packaged variants. The MMDB35 specifically utilizes a beam lead configuration optimized for high-speed switching performance compared to standard packaged alternatives.

RF Diode Replacement Considerations

Direct replacements within the same series include MMDB30-B11 and MMDB45-B11, which offer different breakdown voltages and capacitance values. Verify that the alternative part's transition time and capacitance specifications meet the circuit requirements.

MMDB35-0402MMDB35-0402
$37.79
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