MMDF2N02ER2

FET, MOSFET Arrays Overview

The MMDF2N02ER2 is a dual N-channel enhancement mode MOSFET manufactured by onsemi. It is housed in an SOIC-8 surface-mount package and operates with a drain-source breakdown voltage of 20 V. The device supports a continuous drain current of 5.07 A and features a maximum on-resistance of 35 mΩ. Gate-source voltage limits are specified at ±12 V, while the threshold voltage is typically 1.2 V. Power dissipation reaches 2 W, and the unit functions within a temperature range of -55°C to +150°C.

FET, MOSFET Arrays Feature Summary

• Dual configuration integrating two independent N-channel MOSFETs within a single compact package for space-constrained designs.
• Low on-resistance characteristic enables efficient power switching with minimal conduction losses in high-current applications.
• Enhancement mode operation ensures reliable logic-level control compatibility for standard digital interface driving.

FET, MOSFET Arrays Applications

• DC-DC converter synchronous rectification stages
• Load switching circuits for portable electronics
• Power management modules requiring compact dual-channel solutions

FET, MOSFET Arrays Procurement Notes

Verify component authenticity through authorized distribution channels or direct manufacturer engagement. Confirm RoHS compliance status and specific ordering suffixes against official datasheets prior to procurement. Ensure storage conditions adhere to moisture sensitivity level requirements to maintain device integrity during assembly processes.

FET, MOSFET Arrays Selection Notes

Evaluate thermal performance constraints based on the 2 W power dissipation rating and SOIC-8 package thermal resistance. Compare on-resistance values against circuit efficiency targets to ensure adequate current handling capabilities. Verify gate drive voltage levels align with the specified ±12 V maximum ratings to prevent dielectric breakdown during operation.

FET, MOSFET Arrays Part Context

This component belongs to the MMDF2N02E series of dual N-channel MOSFETs from onsemi. The series provides integrated dual-channel solutions designed for high-efficiency power switching applications. The MMDF2N02ER2 variant specifically utilizes the ER2 tape and reel packaging format for automated surface-mount assembly processes.

FET, MOSFET Arrays Replacement Considerations

Cross-reference with other dual N-channel MOSFETs in the SOIC-8 package offering comparable 20 V ratings and low on-resistance characteristics. Verify pinout compatibility and electrical parameter alignment before substituting to ensure circuit functionality remains unaffected.